MITSUBISHI IGBT MODULES
CM200DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
A
B
F
F
G
P
C2E1
E2
C1
G2
E2
C
D
G1
E1
J
P
K
N - DIA.
(4 TYP.)
M
M
Q - M6 THD
(3 TYP.)
R
TAB#110 t=0.5
L
E
H
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of two
IGBTs in a half-bridge configuration
with each transistor having a re-
verse-connected super-fast recov-
ery free-wheel diode. All compo-
nents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system as-
sembly and thermal management.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM200DY-24H
is a 1200V (V
CES
), 200 Ampere
Dual IGBT Module.
Type
CM
Current Rating
Amperes
200
V
CES
Volts (x 50)
24
M
G2
E2
C2E1
E2
C1
E1
G1
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
Inches
4.25
3.66±0.01
2.44
1.89±0.01
1.22 Max.
0.98
0.85
0.60
Millimeters
108.0
93.0±0.25
62.0
48.0±0.25
31.0 Max.
25.0
21.5
15.2
Dimensions
J
K
L
M
N
P
Q
R
Inches
0.59
0.55
0.30
0.28
0.256 Dia.
0.24
M6 Metric
0.20
Millimeters
15.0
14.0
8.5
7.0
Dia. 6.5
6.0
M6
5.0
Sep.1998
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
