MITSUBISHI IGBT MODULES
CM200E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
T
C
Measured
Point
E
F
G
E2
A
B
H
J
D
C
G2 G2
U
C1
3-M5 Nuts
O
P
O
Q
CM
C2E1
L
2 - Mounting
Holes
(6.5 Dia.)
V
M
N
TAB#110 t=0.5
P
S
R
T
E2
G2
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of one
IGBT having a reverse-connected
super-fast recovery free-wheel di-
ode and an anode-collector con-
nected super-fast recovery free-
wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management
.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Application:
Brake
Ordering Information:
Example: Select the complete
module number you desire from the
table - i.e. CM200E3U-12H is a
600V (V
CES
), 200 Ampere IGBT
Module.
Type
CM
Current Rating
Amperes
200
V
CES
Volts (x 50)
12
C2E1
E2
C1
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
L
Inches
3.7
3.15±0.01
1.89
0.94
0.28
0.67
0.91
0.91
0.43
0.16
Millimeters
94.0
80.0±0.25
48.0
24.0
7.0
17.0
23.0
23.0
11.0
4.0
Dimensions
M
N
O
P
Q
R
S
T
U
V
Inches
0.47
0.53
0.1
0.63
0.98
Millimeters
12.0
13.5
2.5
16.0
25.0
1.18 +0.04/-0.02 30.0 +1.0/-0.5
0.3
0.83
0.16
0.51
7.5
21.2
4.0
13.0
Sep.1998
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
