MITSUBISHI IGBT MODULES
CM200TU-12F
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
3
V
GE
= 15V
2.5
2
1.5
1
0.5
0
T
j
= 25°C
T
j
= 125°C
0
100
200
300
400
400
COLLECTOR CURRENT I
C
(A)
T
j
=25°C
350
300
250
200
150
100
50
7.5
0
0
0.5
1
1.5
2
8
V
GE
=20V
15
11
10
9.5
9
8.5
2.5
3
3.5
4
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
3
7
5
5
T
j
= 25°C
EMITTER CURRENT I
E
(A)
T
j
= 25°C
4
3
2
10
2
7
5
3
2
3
I
C
= 400A
I
C
= 200A
I
C
= 80A
2
10
1
7
5
3
2
1
0
6
8
10
12
14
16
18
20
10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
GATE-EMITTER VOLTAGE V
GE
(V)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
CAPACITANCE–V
CE
CHARACTERISTICS
(TYPICAL)
10
2
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
7
5
3
2
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
7
5
3
2
C
ies
SWITCHING TIMES (ns)
t
d(off)
t
f
t
d(on)
10
1
7
5
3
2
10
2
7
5
3
2
C
oes
C
res
V
GE
= 0V
10
0
7
5
3
2
10
1
7
5
3
2
t
r
Conditions:
V
CC
= 300V
V
GE
=
±15V
R
G
= 3.1Ω
T
j
= 125°C
10
–1 –1
10
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
10
0 0
10
2 3 5 7
10
1
2 3 5 7
10
2
2 3 5 7
10
3
COLLECTOR CURRENT I
C
(A)
Feb.
2009
3
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
