MITSUBISHI IGBT MODULES
CM20TF-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
A
B
L
GuP SuP
P
K
GvP SvP
K
GwP SwP
M
T - DIA.
(2 TYP.)
D
H
N
U
V
W
J
E
GuN SuN
GvN SvN
GwN SwN
Q
S
C
TAB #110, t = 0.5
S
Q
S
P
TAB #250, t = 0.8
G
N
F
R
P
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching appli-
cations. Each module consists of
six IGBTs in a three phase bridge
configuration, with each transistor
having a reverse-connected super-
fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM20TF-12H
is a 600V (V
CES
), 20 Ampere Six-
IGBT Module.
Type
CM
Current Rating
Amperes
20
V
CES
Volts (x 50)
12
GuP
(EuP)
U
GvP
(EvP)
V
GwP
(EwP)
W
GuN
(EuN)
N
GvN
(EvN)
GwN
(EwN)
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
Inches
3.54
2.99±0.01
2.52
1.54
0.98
0.90
0.87
0.75
0.71
Millimeters
90.0
76.0±0.2
64.0
39.0
25.0
23.0
22.0
19.0
18.0
Dimensions
K
L
M
N
P
Q
R
S
T
Inches
0.67
0.63
0.59
0.56
0.51
0.43
0.26
0.24
0.22 Dia.
Millimeters
17.0
16.0
15.0
14.1
13.0
11.0
6.5
6.0
Dia. 5.5
Sep.1998
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
