MITSUBISHI IGBT MODULES
CM300DY-28H
HIGH POWER SWITCHING USE
INSULATED TYPE
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
600
500
400
300
200
100
0
600
500
400
300
200
100
5
14
15
13
12
T
j
= 25°C
V
CE = 10V
V
= 15V
GE
T = 25°C
j
V
GE = 20
(V)
T = 125°C
j
4
3
2
1
0
11
10
9
8
T
T
j
j
= 25°C
= 125°C
0
4
8
12
16
20
0
2
4
6
8
10
0
120
240
360
480
600
COLLECTOR-CURRENT, I , (AMPERES)
GATE-EMITTER VOLTAGE, V , (VOLTS)
GE
COLLECTOR-EMITTER VOLTAGE, V , (VOLTS)
CE
C
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
3
10
2
10
10
8
T = 25°C
j
T = 25°C
j
C
ies
I
= 600A
C
1
0
10
I
= 300A
C
6
C
oes
2
10
4
C
res
10
2
I
= 120A
C
V
= 0V
GE
-1
10
0
1
1.0
10
-1
10
0
1
2
10
0
4
8
12
16
20
10
10
1.5
2.0
2.5
3.0
3.5 4.0
GATE-EMITTER VOLTAGE, V , (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V , (VOLTS)
EMITTER-COLLECTOR VOLTAGE, V , (VOLTS)
GE
CE
EC
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
GATE CHARGE, V
GE
3
2
1
0
4
10
10
10
10
10
20
16
12
8
10
V
V
R
= 800V
= ±15V
= 1.0Ω
CC
GE
I
= 300A
C
G
T = 125°C
I
V
= 600V
j
rr
CC
3
10
t
V
= 800V
CC
t
d(off)
rr
t
f
2
t
t
d(on)
2
10
r
4
di/dt = -600A/µsec
T = 25°C
j
1
10
1
10
0
1
2
3
10
1
2
10
3
10
10
10
10
0
400 800 1200 1600 2000 2400
COLLECTOR CURRENT, I , (AMPERES)
EMITTER CURRENT, I , (AMPERES)
GATE CHARGE, Q , (nC)
C
E
G
Sep.1998
MITSUBISHI [ Mitsubishi Group ]
