MITSUBISHI IGBT MODULES
CM30TF-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
A
C
K
G
U
P E
U
P
S - DIA.
(2 TYP.)
H
N
H
G
V
P E
V
P
G
W
P E
W
P
P
D
J
U
N
G
U
N
E
U
N
G
V
N E
V
N
G
W
N E
W
N
V
W
L
E
R
Q
B
R
Q
R
P
TAB #250, t = 0.8
TAB #110, t = 0.5
G
M
F
R
P
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of six
IGBTs in a three phase bridge con-
figuration, with each transistor hav-
ing a reverse-connected super-fast
recovery free-wheel diode. All com-
ponents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system as-
sembly and thermal management.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM30TF-12H
is a 600V (V
CES
), 30 Ampere Six-
IGBT Module.
Type
CM
Current Rating
Amperes (30)
30
V
CES
Volts (x 50)
12
GuP
EuP
U
GvP
EvP
V
GwP
EwP
W
GuN
EuN
N
GvN
EvN
GwN
EwN
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
Inches
4.21
3.66±0.01
3.19
1.77
1.18
1.11
1.05
0.85
0.83
Millimeters
107.0
93.0±0.2
81.0
45.0
30.0
28.2
26.6
21.5
21.0
Dimensions
K
L
M
N
P
Q
R
S
Inches
0.79
0.71
0.69
0.69
0.63
0.55
0.30
0.22 Dia.
Millimeters
20.0
18.0
17.5
17.5
16.0
14.0
7.5
Dia. 5.5
Sep.1998
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
