MITSUBISHI IGBT MODULES
CM50TF-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
100
T
j
= 25
o
C
COLLECTOR CURRENT, I
C
, (AMPERES)
COLLECTOR CURRENT, I
C
, (AMPERES)
100
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
5
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
V
GE
= 20V
15
12
75
11
75
4
3
50
10
50
2
25
7
9
8
25
1
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
0
0
25
50
75
100
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
10
2
T
j
= 25°C
EMITTER CURRENT, I
E
, (AMPERES)
10
1
T
j
= 25°C
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
8
C
ies
I
C
= 100A
6
I
C
= 50A
10
1
10
0
C
oes
4
2
I
C
= 20A
V
GE
= 0V
C
res
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
10
0
0
0.8
1.6
2.4
3.2
4.0
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
10
-1
10
-1
10
0
10
1
10
2
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, V
GE
10
3
REVERSE RECOVERY TIME, t
rr
, (ns)
10
3
t
f
10
1
20
I
C
= 50A
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
16
SWITCHING TIME, (ns)
t
d(off)
I
rr
V
CC
= 200V
12
10
2
t
d(on)
10
2
t
rr
10
0
V
CC
= 300V
8
t
r
V
CC
= 300V
V
GE
= ±15V
R
G
= 13Ω
T
j
= 125°C
di/dt = -100A/µsec
T
j
= 25°C
4
10
1
10
0
10
1
COLLECTOR CURRENT, I
C
, (AMPERES)
10
2
10
1
10
0
10
1
EMITTER CURRENT, I
E
, (AMPERES)
10
-1
10
2
0
0
50
100
150
200
250
GATE CHARGE, Q
G
, (nC)
Sep.1998
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
