MITSUBISHI IGBT MODULES
CM600DU-24F
HIGH POWER SWITCHING USE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT l
rr
(A)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j–c)
(°C/W)
10
3
7
5
3
2
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10
–5
2 3 5 7
10
–4
2 3 5 7
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
10
0
7
IGBT part:
5
Per unit base = R
th(j–c)
= 0.081°C/W
3
FWDi part:
2
Per unit base = R
th(j–c)
= 0.11°C/W
10
–1
7
5
3
2
7
5
3
2
3
2
10
2
7
5
3
2
1
I
rr
t
rr
Conditions:
V
CC
= 600V
V
GE
=
±15V
R
G
= 1.0Ω
T
j
= 25°C
Inductive load
2
3
5 7
10
2
2
3
5 7
10
3
10
–2
Single Pulse
T
C
= 25°C
10
0
7
5
3
2
10
1 1
10
10
–3
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
TMIE (s)
EMITTER CURRENT (A)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
GATE-EMITTER VOLTAGE V
GE
(V)
18
16
14
12
10
8
6
4
2
0
0
2000
4000
6000
8000
10000
I
C
= 600A
V
CC
= 400V
V
CC
= 600V
GATE CHARGE Q
G
(nC)
Mar. 2002
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
