MITSUBISHI IGBT MODULES
CM600HA-5F
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
1200
COLLECTOR CURRENT, I
C
, (AMPERES)
1000
V
GE
= 15V
1000
800
600
400
200
0
5.5
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
10
8
6
COLLECTOR CURRENT, I
C
, (AMPERES)
T
j
= 25
o
C
5.75
1200
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
2.0
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
1.5
800
600
5.25
1.0
400
5.0
0.5
200
0
0
1
2
4.5
4.75
0
0
2
4
6
8
10
0
200
400
600
800
1000 1200
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-CURRENT, I
C
, (AMPERES)
3
4
5
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
5
T
j
= 25°C
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
EMITTER CURRENT, I
E
, (AMPERES)
10
4
T
j
= 25°C
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
10
3
V
GE
= 0V
4
10
3
C
ies
10
2
3
I
C
= 600A
I
C
= 1200A
2
10
2
10
1
C
oes
C
res
1
I
C
= 240A
0
0
5
10
15
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
10
1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
10
0
10
-1
10
0
10
1
10
2
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, V
GE
10
4
REVERSE RECOVERY TIME, t
rr
, (ns)
10
3
V
CC
= 100V
V
GE
=
±10V
R
G
= 4.2Ω
T
j
= 125°C
di/dt = -1200A/µsec
T
j
= 25°C
10
3
20
I
C
= 600A
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
SWITCHING TIME, (ns)
15
V
CC
= 50V
V
CC
= 100V
t
rr
10
3
t
d(off)
t
d(on)
10
2
I
rr
10
2
10
t
f
5
t
r
10
2
10
1
10
2
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
1
10
1
10
1
10
2
EMITTER CURRENT, I
E
, (AMPERES)
10
3
0
0
1
2
3
4
5
GATE CHARGE, Q
G
, (nC)
Sep.2000
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
