MITSUBISHI IGBT MODULES
CM75TU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
150
COLLECTOR CURRENT I
C
(A)
TRANSFER CHARACTERISTICS
(TYPICAL)
150
COLLECTOR CURRENT I
C
(A)
V
GE
= 20
(V)
15
12
V
CE
= 10V
125
100
75
50
25
0
125 T
j
= 25°C
100
75
10
50
9
25
8
0
0
2
4
6
8
10
11
T
j
= 25°C
T
j
= 125°C
0
4
8
12
16
20
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T
j
= 25°C
5
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
4
8
3
6
I
C
= 150A
I
C
= 75A
2
I
C
= 30A
2
4
1
0
0
25
50
75
100
125
150
0
0
4
8
12
16
20
COLLECTOR CURRENT I
C
(A)
GATE-EMITTER VOLTAGE V
GE
(V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
7
5
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10
2
7
5
3
2
T
j
= 25°C
EMITTER CURRENT I
E
(A)
3
2
10
1
7
5
3
2
10
2
7
5
3
2
C
ies
10
0
7
5
3
2
C
oes
C
res
10
1
7
1.0
1.5
2.0
2.5
3.0
3.5
V
GE
= 0V
10
–1 –1
10
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
Feb. 2009
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
3
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
