MITSUBISHI SEMICONDUCTOR
〈THYRISTOR〉
CR02AM-8A
LOW POWER USE
GLASS PASSIVATION TYPE
CR02AM-8A
OUTLINE DRAWING
φ5.0
MAX
4.4
Dimensions
in mm
2
VOLTAGE
CLASS
TYPE
NAME
3
1
T
1
TERMINAL
2
T
2
TERMINAL
3
GATE TERMINAL
CIRCUMSCRIBE
CIRCLE
φ0.7
1.25 1.25
1.3
12.5 MIN
1
5.0 MAX
0.47
0.3
10
0.4
0.1
0.01
6
6
0.1
0.23
1 3 2
• I
T (AV)
........................................................................ 0.3A
• V
DRM
....................................................................... 400V
• I
GT
......................................................................... 100µA
APPLICATION
Strobe flasher
JEDEC : TO-92
MAXIMUM RATINGS
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
V1
V1
Voltage class
8
400
500
320
400
320
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
—
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Typical value
Conditions
Commercial frequency, sine half wave, 180° conduction, T
a
=30°C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Ratings
–40 ~ +125
–40 ~ +125
V1.
With gate to cathode resistance R
GK
=1kΩ.
Feb.1999
3.9 MAX
Unit
V
V
V
V
V
Unit
A
A
A
A
2
s
W
W
V
V
A
°C
°C
g
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
