MITSUBISHI Nch POWER MOSFET
FS18SM-10
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
40
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(Ω)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
1.0
T
C
= 25°C
Pulse Test
T
C
= 25°C
Pulse Test
32
0.8
24
I
D
= 35A
16
25A
8
18A
9A
0
0
4
8
12
16
20
0.6
V
GS
= 10V
20V
0.4
0.2
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
DRAIN CURRENT I
D
(A)
GATE-SOURCE VOLTAGE V
GS
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
40
T
C
= 25°C
V
DS
= 50V
Pulse Test
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10
2
7
5
3
2
10
1
7
5
3
2
10
0 0
10
2 3
125°C
V
DS
= 10V
Pulse Test
DRAIN CURRENT I
D
(A)
32
24
16
T
C
= 25°C
75°C
8
0
0
4
8
12
16
20
5 7 10
1
2 3
5 7 10
2
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
5
3
2
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
7
5
SWITCHING TIME (ns)
Ciss
10
3
7
5
3
2
10
2
7
5
Crss
3 Tch = 25°C
2 f = 1MHz
V
GS
= 0V
10
1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3
DRAIN-SOURCE VOLTAGE V
DS
(V)
Coss
3
2
10
2
7
5
3
2
10
1
10
0
2 3
Tch = 25°C
V
DD
= 200V
V
GS
= 10V
R
GEN
= R
GS
= 50Ω
t
d(off)
t
r
t
f
t
d(on)
5 7 10
1
2 3
5 7 10
2
DRAIN CURRENT I
D
(A)
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
