MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54513P/FP
8-UNIT 50mA TRANSISTOR ARRAY
DESCRIPTION
M54513P and M54513FP are eight-circuit transistor arrays.
The circuits are made of NPN transistors. Both the semicon-
ductor integrated circuits perform high-current driving with
extremely low input-current supply.
PIN CONFIGURATION
INPUT
IN1→ 1
IN2→ 2
IN3→ 3
IN4→ 4
IN5→ 5
IN6→ 6
IN7→ 7
IN8→ 8
GND
9
18
→O1
17
→O2
16
→O3
15
→O4
14
→O5
13
→O6
12
→O7
11
→O8
10
NC
NC : No connection
�½
OUTPUT
FEATURES
High breakdown voltage (BV
CEO
≥
40V)
Synchronizing current (Ic(max) = 50mA)
Wide operating temperature range (Ta = –20 to +75°C)
Package type 18P4G(P)
NC
1
20
NC
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
FUNCTION
The M54513P and M54513FP each have eight circuits con-
sisting of NPN transistors. These ICs have resistance of 2
kΩ at inputs and of 13.6kΩ between the base and emitter.
The GND is used in common in each circuit.
The transistors allow synchronous flow of 50mA collector
current. A maximum of 40V voltage can be applied between
the collector and emitter.
The M54513FP is enclosed in a molded small flat package,
enabling space-saving design.
INPUT
IN1→ 2
IN2→ 3
IN3→ 4
IN4→ 5
IN5→ 6
IN6→ 7
IN7→ 8
IN8→ 9
GND
10
19
→O1
18
→O2
17
→O3
16
→O4
15
→O5
14
→O6
13
→O7
12
→O8
11
NC
�½
OUTPUT
Package type 20P2N-A(FP)
NC : No connection
CIRCUIT DIAGRAM
OUTPUT
2K
INPUT
13.6K
GND
The eight circuits share the GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
Ω
Aug. 1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
