MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54519P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
DESCRIPTION
M54519P and M54519FP are seven-circuit Darlington tran-
sistor arrays. The circuits are made of NPN transistors. Both
the semiconductor integrated circuits perform high-current
driving with extremely low input-current supply.
PIN CONFIGURATION
INPUT
16
→O1
15
→O2
14
→O3
13
→O4
12
→O5
11
→O6
10
→O7
9
NC
IN1→ 1
IN2→ 2
IN3→ 3
IN4→ 4
IN5→ 5
IN6→ 6
IN7→ 7
GND
8
FEATURES
High breakdown voltage (BV
CEO
≥
40V)
High-current driving (Ic(max) = 400mA)
Driving available with PMOS IC output
Wide operating temperature range (Ta = –20 to +75°C)
�½
OUTPUT
16P4(P)
Package type 16P2N-A(FP)
NC : No connection
CIRCUIT DIAGRAM
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter-
faces
OUTPUT
INPUT
20K
20K
2K
GND
FUNCTION
The M54519P and M54519FP each have seven circuits con-
sisting of NPN Darlington transistors. These ICs have resis-
tance of 20kΩ between input transistor bases and input pins.
The output transistor emitters are all connected to the GND
pin (pin 8).
Collector current is 400mA maximum. Collector-emitter sup-
ply voltage is 40V maximum.
The M54519FP is enclosed in a molded small flat package,
enabling space-saving design.
The seven circuits share the GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
I
C
V
I
P
d
T
opr
T
stg
Parameter
Collector-emitter voltage
Collector current
Input voltage
Power dissipation
Operating temperature
Storage temperature
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
Conditions
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
Ratings
–0.5 ~ +40
400
–0.5 ~ +40
1.47(P)/1.00(FP)
–20 ~ +75
–55 ~ +125
Unit
V
mA
V
W
°C
°C
Aug. 1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
