MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54526P/FP
7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54526P and M54526FP are seven-circuit Darlington tran-
sistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
PIN CONFIGURATION
INPUT
IN1→ 1
IN2→ 2
IN3→ 3
IN4→ 4
IN5→ 5
IN6→ 6
IN7→ 7
GND
8
16
→O1
15
→O2
14
→O3
13
→O4
�½
OUTPUT
12
→O5
11
→O6
10
→O7
9
→COM
COMMON
FEATURES
High breakdown voltage (BV
CEO
≥
50V)
High-current driving (Ic(max) = 500mA)
With clamping diodes
Driving available with PMOS IC output of 8-18V
Wide operating temperature range (Ta = –20 to +75°C)
16P4(P)
Package type 16P2N-A(FP)
CIRCUIT DIAGRAM
COM
OUTPUT
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter-
faces
10.5K
INPUT
5K
3K
GND
The seven circuits share the COM and GND.
FUNCTION
The M54526P and M54526FP each have seven circuits con-
sisting of NPN Darlington transistors. These ICs have resis-
tance of 10.5kΩ between input transistor bases and input
pins. A spike-killer clamping diode is provided between each
output pin (collector) and COM pin (pin 9). The output tran-
sistor emitters are all connected to the GND pin (pin 8).
The collector current is 500mA maximum. Collector-emitter
supply voltage is 50V maximum.
The M54526FP is enclosed in a molded small flat package,
enabling space-saving design.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
I
C
V
I
I
F
V
R
P
d
T
opr
T
stg
Parameter
Collector-emitter voltage
Collector current
Input voltage
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
Conditions
Output, H
Current per circuit output, L
Ratings
–0.5 ~ +50
500
–0.5 ~ +30
500
Unit
V
mA
V
mA
V
W
°C
°C
Aug. 1999
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Ta = 25°C, when mounted on board
50
1.47(P)/1.00(FP)
–20 ~ +75
–55 ~ +125
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
