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M54532FP 参数 Datasheet PDF下载

M54532FP图片预览
型号: M54532FP
PDF下载: 下载PDF文件 查看货源
内容描述: 带钳位二极管4单元1.5A达林顿晶体管阵列 [4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE]
分类和应用: 晶体二极管晶体管达林顿晶体管
文件页数/大小: 4 页 / 79 K
品牌: MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54532P/FP
4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54532P and M54532FP are four-circuit Darlington transis-
tor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
PIN CONFIGURATION
COMMON COM
1
16
NC
OUTPUT1 O1← 2
INPUT1 IN1→ 3
GND
15
→O4
OUTPUT4
14
←IN4
INPUT4
13
12
4
5
�½
GND
INPUT2 IN2→ 6
11
←IN3
INPUT3
10
→O3
OUTPUT3
9
NC
FEATURES
High breakdown voltage (BV
CEO
50V)
High-current driving (Ic(max) = 1.5A)
With clamping diodes
Wide operating temperature range (Ta = –20 to +75°C)
OUTPUT2 O2← 7
COMMON COM
8
16P4(P)
Package type 16P2N-A(FP)
NC : No connection
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and power amplification
CIRCUIT DIAGRAM
COM
OUTPUT
INPUT
340
FUNCTION
The M54532P and M54532FP each have four circuits con-
sisting of NPN Darlington transistors. They have resistance
of 340Ω between input transistor bases and input pins. A
clamping diode is provided between each output pin (collec-
tor) and COM pin. The output transistor emitters are all con-
nected to the GND pin.
The collector current is 1.5A maximum. Collector-emitter
supply voltage is 50V maximum.
The M54532FP is enclosed in a molded small flat package,
enabling space-saving design.
5.5K
3K
GND
The four circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
I
C
V
I
V
R
I
F
P
d
T
opr
T
stg
Parameter
Collector-emitter voltage
Collector current
Input voltage
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
Conditions
Output, H
Current per circuit output, L
Ratings
–0.5 ~ +50
1.5
–0.5 ~ +10
50
1.5
1.25
1.92(P)/1.00(FP)
–20 ~ +75
–55 ~ +125
Unit
V
A
V
V
A
W
°C
°C
Aug. 1999
Clamping diode reverse voltage
Clamping diode forward current
Power dissipation
Operating temperature
Storage temperature
Pulse Width
10ms, Duty Cycle
5%
Pulse Width
100ms, Duty Cycle
5%
Ta = 25°C, when mounted on board