MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54562P/FP
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54562P and M54562FP are eight-circuit output-sourcing
Darlington transistor arrays. The circuits are made of PNP
and NPN transistors. Both the semiconductor integrated cir-
cuits perform high-current driving with extremely low input-
current supply.
PIN CONFIGURATION
INPUT
18
→O1
17
→O2
16
→O3
15
→O4
14
→O5
13
→O6
12
→O7
11
→O8
10 GND
IN1→ 1
IN2→ 2
IN3→ 3
IN4→ 4
IN5→ 5
IN6→ 6
IN7→ 7
IN8→ 8
V
S
9
�½
OUTPUT
FEATURES
High breakdown voltage (BV
CEO
≥
50V)
High-current driving (Io(max) = –500mA)
With output clamping diodes
Driving available with PMOS IC output of 6 ~ 16V or with TTL output
Wide operating temperature range (Ta = –20 to +75°C)
Output current-sourcing type
Package type 18P4G(P)
NC
1
20
NC
APPLICATION
Drives of relays, printers, LEDs, fluorescent display tubes
and lamps, and interfaces between MOS-bipolar logic sys-
tems and relays, solenoids, or small motors
FUNCTION
The M54562P and M54562FP each have eight circuits,
which are made of input inverters and current-sourcing out-
puts. The outputs are made of PNP transistors and NPN
Darlington transistors. The PNP transistor base current is
constant. A spike-killer clamping diode is provided between
each output and GND. V
S
and GND are used commonly
among the eight circuits.
The inputs have resistance of 8.5kΩ, and voltage of up to
30V is applicable. Output current is 500mA maximum. Sup-
ply voltage V
S
is 50V maximum.
The M54562FP is enclosed in a molded small flat package,
enabling space-saving design.
INPUT
IN1→ 2
IN2→ 3
IN3→ 4
IN4→ 5
IN5→ 6
IN6→ 7
IN7→ 8
IN8→ 9
V
S
10
19
→
O1
18
17
16
15
14
13
12
→
O2
→
O3
→
O4
�½
OUTPUT
→
O5
→
O6
��
→
O7
→
O8
11 GND
Package type 20P2N-A(FP)
NC : No connection
CIRCUIT DIAGRAM
V
S
20K
8.5K
INPUT
7.2K
1.5K
3K
OUTPUT
GND
The eight circuits share the V
S
and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
Ω
Aug. 1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
