MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54563P/FP
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54563FP is an eight-circuit output-sourcing Darlington
transistor array. The circuits are made of PNP and NPN tran-
sistors. This semiconductor integrated circuit performs high-
current driving with extremely low input-current supply.
PIN CONFIGURATION
INPUT
IN1→ 1
IN2→ 2
IN3→ 3
IN4→ 4
IN5→ 5
IN6→ 6
IN7→ 7
IN8→ 8
V
S
9
18
→O1
17
→O2
16
→O3
15
→O4
14
→O5
13
→O6
12
→O7
11
→O8
10 GND
�½
OUTPUT
FEATURES
High breakdown voltage (BV
CEO
≥
50V)
High-current driving (Io(max) = –500mA)
With clamping diodes
Driving available with PMOS IC output of 6 ~ 16V or with TTL output
Wide operating temperature range (Ta = –20 to +75°C)
Output current-sourcing type
Package type 18P4G(P)
NC
1
20
NC
APPLICATION
Drives of relays, printers, LEDs, fluorescent display tubes
and lamps, and interfaces between MOS-bipolar logic sys-
tems and relays, solenoids, or small motors
FUNCTION
The M54563P and M54563FP each have eight circuits,
which are made of input inverters and current-sourcing out-
puts. The outputs are made of PNP transistors and NPN
Darlington transistors. The PNP transistor base current is
constant. A clamping diode is provided between each output
and GND. V
S
and GND are used commonly among the eight
circuits.
The inputs have resistance of 3kΩ, and voltage of up to 10V
is applicable. Output current is 500 mA maximum. Supply
voltage V
S
is 50V maximum.
The M54563FP is enclosed in a molded small flat package,
enabling space-saving design.
INPUT
IN1→ 2
IN2→ 3
IN3→ 4
IN4→ 5
IN5→ 6
IN6→ 7
IN7→ 8
IN8→ 9
V
S
10
19
→O1
18
→O2
17
→O3
16
→O4
15
→O5
14
→O6
13
→O7
12
→O8
11 GND
�½
OUTPUT
Package type 20P2N-A(FP)
NC : No connection
CIRCUIT DIAGRAM
V
S
20K
3K
INPUT
7.2K
1.5K
3K
OUTPUT
GND
The eight circuits share the V
S
and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
Ω
Aug. 1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
