MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54564P/FP
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
S
V
I
I
O
P
d
T
opr
T
stg
Parameter
Collector-emitter voltage
Supply voltage
Input voltage
Output current
Power dissipation
Operating temperature
Storage temperature
Current per circuit output, H
Ta = 25°C, when mounted on board
Output, L
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
Conditions
Ratings
–0.5 ~ +50
50
–0.5 ~ +30
–500
1.79(P)/1.10(FP)
–20 ~ +75
–55 ~ +125
Unit
V
V
V
mA
W
°C
°C
RECOMMENDED OPERATING CONDITIONS
Symbol
V
S
Supply voltage
Output current
(Current per 1 cir-
cuit when 8 circuits
are coming on si-
multaneously)
“H” input voltage
“L” input voltage
Parameter
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
min
0
Limits
typ
—
—
—
—
—
max
50
–350
Unit
V
I
O
Duty Cycle
P : no more than 8%
FP : no more than 5%
Duty Cycle
P : no more than 55%
FP : no more than 30%
0
0
2.4
0
mA
–100
25
0.2
V
V
V
IH
V
IL
ELECTRICAL CHARACTERISTICS
Symbol
I
S (leak)
V
CE (sat)
I
I
I
S
Parameter
Supply leak current
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
Test conditions
V
S
= 50V, V
I
= 0.2V
V
S
= 10V, V
I
= 2.4V, I
O
= –350mA
V
S
= 10V, V
I
= 2.4V, I
O
= –100mA
V
I
= 5V, V
S
= 10V
V
I
= 25V, V
S
= 30V
V
S
= 50V, V
I
= 5V
Limits
min
—
—
—
—
—
—
typ
+
—
1.6
1.45
0.4
2.9
—
max
100
2.4
2.0
0.7
6.5
5.0
Unit
µA
V
mA
mA
Collector-emitter saturation voltage
Input current
Supply current
+
: The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
SWITCHING CHARACTERISTICS
(Unless otherwise noted, Ta = 25
°
C)
Symbol
t
on
t
off
Parameter
Turn-on time
Turn-off time
C
L
= 15pF (note 1)
Test conditions
min
—
—
Limits
typ
185
4300
max
—
—
Unit
ns
ns
Aug. 1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
