MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54566P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
DESCRIPTION
M54566P and M54566FP are seven-circuit collector-current-
synchronized Darlington transistor arrays. The circuits are
made of PNP and NPN transistors. Both the semiconductor
integrated circuits perform high-current driving with ex-
tremely low input-current supply.
PIN CONFIGURATION
INPUT
16
→O1
15
→O2
14
→O3
13
→O4
�½
OUTPUT
12
→O5
IN1→ 1
IN2→ 2
IN3→ 3
IN4→ 4
IN5→ 5
IN6→ 6
IN7→ 7
GND
8
FEATURES
High breakdown voltage (BV
CEO
≥
50V)
High-current driving (Ic(max) = 400mA)
Active L-level input
Wide operating temperature range (Ta = –20 to +75°C)
11
→O6
10
→O7
9
V
CC
16P4(P)
Package type 16P2N-A(FP)
APPLICATION
Interfaces between microcomputers and high-voltage, high-
current drive systems, drives of relays and printers, and
MOS-bipolar logic IC interfaces
CIRCUIT DIAGRAM
V
CC
20K
INPUT
8K
7.2K
2.7K
OUTPUT
FUNCTION
The M54566 is produced by adding PNP transistors to
M54222 inputs. Seven circuits having active L-level inputs
are provided.
Resistance of 8kΩ is provided between each input and PNP
transistor base. The input emitters are connected to V
CC
pin
(pin 9). Output transistor emitters are all connected to the
GND pin (pin 8).
Collector current is 400mA maximum. Collector-emitter sup-
ply voltage is 50V maximum.
These ICs are optimal for drivers that are driven with N-MOS
IC output and absorb collector current.
The M54566FP is enclosed in a molded small flat package,
enabling space-saving design.
3K
GND
The seven circuits share the V
CC
and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
CEO
I
C
V
I
P
d
T
opr
T
stg
Parameter
Supply voltage
Collector-emitter voltage
Collector current
Input voltage
Power dissipation
Operating temperature
Storage temperature
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
Conditions
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
Ratings
10
–0.5 ~ +50
400
–0.5 ~ V
CC
1.47(P)/1.00(FP)
–20 ~ +75
–55 ~ +125
Unit
V
V
mA
V
W
°C
°C
Aug. 1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
