MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54567P/FP
4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54567P and M54567FP are four-circuit Darlington transis-
tor arrays with clamping diodes. The circuits are made of
PNP and NPN transistors. Both the semiconductor inte-
grated circuits perform high-current driving with extremely
low input-current supply.
PIN CONFIGURATION
V
CC
OUTPUT1
1
16
COM COMMON
O1← 2
15
→O4
OUTPUT4
14
←IN4
INPUT4
13
12
INPUT1 IN1→ 3
GND
4
5
�½
GND
INPUT2 IN2→ 6
11
←IN3
INPUT3
10
→O3
OUTPUT3
9
COM COMMON
FEATURES
High breakdown voltage (BV
CEO
≥
50V)
High-current driving (Ic(max) = 1.5A)
With clamping diodes
Driving available with NMOS IC output
Wide operating temperature range (Ta = –20 to +75°C)
OUTPUT2
O2← 7
V
CC
8
16P4(P)
Package type 16P2N-A(FP)
CIRCUIT DIAGRAM
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and power amplification
INPUT
V
CC
22K
8K
COM
OUTPUT
2K
5.5K
3K
GND
The four circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
Ω
FUNCTION
The M54567P and M54567FP each have four circuits, which
are made of PNP transistors and NPN Darlington transistors.
The input has 8kΩ, and a spike-killer clamping diode is pro-
vided between the output pin (collector) and COM pin. All
output transistor emitters are connected to the GND pin.
Collector current is 1.5A maximum. The maximum collector-
emitter voltage is 50V.
The M54567FP is enclosed in a molded small flat package,
enabling space-saving design.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
CEO
I
C
V
I
V
R
I
F
P
d
T
opr
T
stg
Parameter
Supply voltage
Collector-emitter voltage
Collector current
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
Conditions
Output, H
Current per circuit output, L
Ratings
10
–0.5 ~ +50
1.5
–0.5 ~ +30
50
1.5
1.0
1.92(P)/1.00(FP)
–20 ~ +75
–55 ~ +125
Unit
V
V
A
V
V
A
W
°C
°C
Aug. 1999
Input voltage
Clamping diode reverse voltage
Clamping diode forward current
Power dissipation
Operating temperature
Storage temperature
Pulse Width
≤
10ms, Duty Cycle
≤
5%
Pulse Width
≤
100ms, Duty Cycle
≤
5%
Ta = 25°C, when mounted on board
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
