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M5M51008CFP-70H 参数 Datasheet PDF下载

M5M51008CFP-70H图片预览
型号: M5M51008CFP-70H
PDF下载: 下载PDF文件 查看货源
内容描述: 1048576 - BIT ( 131072 -字×8位)的CMOS静态RAM [1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 7 页 / 90 K
品牌: MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
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MITSUBISHI LSIs
M5M51008CP,FP,VP,RV,KV,KR -55H, -70H,
-55X, -70X
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS
static RAM organized as 131072 word by 8-bit which are
fabricated using high-performance quadruple-polysilicon and
double metal CMOS technology. The use of thin film transistor
(TFT) load cells and CMOS periphery result in a high density and
low power static RAM.
They are low standby current and low operation current and ideal
for the battery back-up application.
The M5M51008CVP,RV,KV,KR are packaged in a 32-pin thin
small outline package which is a high reliability and high density
surface mount device(SMD). Two types of devices are available.
M5M51008CVP,KV(normal lead bend type package),
M5M51008CRV,KR(reverse lead bend type package).Using both
types of devices, it becomes very easy to design a printed circuit
board.
PIN CONFIGURATION (TOP VIEW)
NC
A
16
A
14
A
12
A
7
A
6
A
5
A
4
A
3
1
2
3
4
5
6
7
8
9
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
ADDRESS
INPUTS
FEATURES
Type name
M5M51008CP,FP,VP,RV,KV,KR-55H
M5M51008CP,FP,VP,RV,KV,KR-70H
M5M51008CP,FP,VP,RV,KV,KR-55X
M5M51008CP,FP,VP,RV,KV,KR-70X
Access
time
(max)
Power supply current
Active
(1MHz)
(max)
stand-by
(max)
DATA
INPUTS/
OUTPUTS
A
2 10
A
1 11
A
0 12
DQ
1 13
DQ
2 14
DQ
3 15
GND
16
V
CC
ADDRESS
A
15
INPUT
CHIP SELECT
S
2
INPUT
WRITE
W
INPUT CONTROL
A
13
A
8
ADDRESS
INPUTS
A
9
A
11
OUTPUT
OE
INPUT ENABLE
ADDRESS
A
10
INPUT
CHIP
S
1
INPUTSELECT
DQ
8
DQ
7
DQ
6
DATA
INPUTS/
DQ
5
OUTPUTS
DQ
4
Outline 32P4(P), 32P2M-A(FP)
A
11
A
9
A
8
A
13
W
S
2
A
15
V
CC
NC
A
16
A
14
A
12
A
7
A
6
A
5
A
4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
55ns
70ns
55ns
70ns
15mA
(1MHz)
20µA
(Vcc=5.5V)
8µA
(Vcc=5.5V)
0.1µA
(Vcc=3.0V typ)
Low stand-by current 0.1µA (typ.)
Directly TTL compatible : All inputs and outputs
Easy memory expansion and power down by S
1
,S
2
Data hold on +2V power supply
Three-state outputs : OR - tie capability
OE prevents data contention in the I/O bus
Common data I/O
Package
M5M51008CP
············
32pin 600mil DIP
M5M51008CFP
············
32pin 525mil SOP
M5M51008CVP,RV
············
32pin 8 X 20 mm
2
TSOP
M5M51008CKV,KR
············
32pin 8 X 13.4 mm
2
TSOP
M5M51008CVP,KV
25
24
23
22
21
20
19
18
17
OE
A
10
S
1
DQ
8
DQ
7
DQ
6
DQ
5
DQ
4
GND
DQ
3
DQ
2
DQ
1
A
0
A
1
A
2
A
3
APPLICATION
Small capacity memory units
A
4
A
5
A
6
A
7
A
12
A
14
A
16
NC
V
CC
A
15
S
2
W
A
13
A
8
A
9
A
11
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
Outline 32P3H-E(VP), 32P3K-B(KV)
17
18
19
20
21
22
23
A
3
A
2
A
1
A
0
DQ
1
DQ
2
DQ
3
GND
DQ
4
DQ
5
DQ
6
DQ
7
DQ
8
S
1
A
10
OE
M5M51008CRV,KR
24
25
26
27
28
29
30
31
32
Outline 32P3H-F(RV), 32P3K-C(KR)
NC : NO CONNECTION
MITSUBISHI
ELECTRIC
1