'97.4.7
MITSUBISHI LSIs
M5M5256DP,FP,VP,RV -45LL,-55LL,-70LL,
-45XL,-55XL,-70XL
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
DESCRIPTION
The M5M5256DP,FP,VP,RV is 262,144-bit CMOS static RAMs
organized as 32,768-words by 8-bits which is fabricated using
high-performance 3 polysilicon CMOS technology. The use of
resistive load NMOS cells and CMOS periphery results in a high
density and low power static RAM. Stand-by current is small
enough for battery back-up application. It is ideal for the memory
systems which require simple interface.
Especially the M5M5256DVP,RV are packaged in a 28-pin thin
small outline package.Two types of devices are available,
M5M5256DVP(normal lead bend type package),
M5M5256DRV(reverse lead bend type package). Using both types of
devices, it becomes very easy to design a printed circuit board.
PIN CONFIGURATION (TOP VIEW)
A14
A12
1
2
A7
3
A6
4
A5
5
A4
6
7
A3
A2
8
A1
9
A0
10
DQ1 11
DQ2 12
DQ3 13
GND 14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Vcc
/W
A13
A8
A9
A11
/OE
A10
/S
DQ8
DQ7
DQ6
DQ5
DQ4
M5M5256DP,FP
FEATURE
Type
Access Power supply current
time
Active Stand-by
(max)
(max)
(max)
45ns
55ns
70ns
45ns
55ns
70ns
55mA
(Vcc=5.5V)
Outline 28P4 (DP)
28P2W-C (DFP)
M5M5256DP, FP,VP,RV-45LL
M5M5256DP, FP,VP,RV-55LL
M5M5256DP, FP,VP,RV-70LL
M5M5256DP, FP,VP,RV-45XL
M5M5256DP, FP,VP,RV-55XL
M5M5256DP, FP,VP,RV-70XL
20µA
(Vcc=5.5V)
5µA
(Vcc=5.5V)
0.05µA
(Vcc=3.0V,
Typical)
•Single +5V power supply
•No clocks, no refresh
•Data-Hold on +2.0V power supply
•Directly TTL compatible : all inputs and outputs
•Three-state outputs : OR-tie capability
•/OE prevents data contention in the I/O bus
•Common Data I/O
•Battery backup capability
•Low stand-by current··········0.05µA(typ.)
22 /OE
23 A11
24 A9
25 A8
26 A13
27 /W
28Vcc
1 A14
2 A12
3 A7
4 A6
5 A5
6 A4
7 A3
M5M5256DVP
A10 21
/S 20
DQ8 19
DQ7 18
DQ6 17
DQ5 16
DQ415
GND 14
DQ3 13
DQ2 12
DQ1 11
A0 10
A1 9
A2 8
Outline 28P2C-A (DVP)
7 A3
6 A4
5 A5
4 A6
3 A7
2 A12
1 A14
28 Vcc
27 /W
26 A13
25 A8
24 A9
23 A11
22 /OE
A2 8
A1 9
A0 10
DQ1 11
DQ2 12
DQ3 13
GND 14
DQ4 15
DQ5 16
DQ6 17
DQ7 18
DQ8 19
/S 20
A10 21
PACKAGE
M5M256DP
: 28 pin 600 mil DIP
M5M5256DFP
: 28 pin 450 mil SOP
M5M5256DVP,RV : 28pin 8 X 13.4 mm
2
M5M5256DRV
TSOP
APPLICATION
Small capacity memory units
Outline 28P2C-B (DRV)
MITSUBISHI
ELECTRIC
1
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
