revision-P04, ' 98.12.16
MITSUBISHI LSIs
M5M5V416BTP,RT
DESCRIPTION
The M5M5V416B is a f amily of low v oltage 4-Mbit static RAMs
organized as 262,144-words by 16-bit, f abricated by Mitsubishi's
high-perf ormance 0.25µm CMOS technology .
The M5M5V416B is suitable f or memory applications where a
simple interf acing , battery operating and battery backup are the
important design objectiv es.
M5M5V416BTP,RT are packaged in a 44-pin 400mil thin small
outline package. M5M5V416BTP (normal lead bend ty pe package)
, M5M5V416BRT (rev erse lead bend ty pe package) , both ty pes
are v ery easy t o design a printed circuit board.
From the point of operating temperature, the f amily is div ided into
three v ersions; "Standard", "W-v ersion", and "I-v ersion". Those are
summarized in the part name table below.
Version,
Operating
temperature
Part name
M5M5V416BTP , RT -70L
M5M5V416BTP , RT -85L
PRELIMINARY
FEATURES
Notice: This is not a final specification.
Some parametric limits are subject to change
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
Single +2.7~+3.6V power supply
Small stand-by current: 0.3µA(3V,ty p.)
No clocks, No ref resh
Data retention supply v oltage=2.0V to 3.6V
All inputs and outputs are TTL compatible.
Easy memory expansion by S1, S2, BC1 and BC2
Common Data I/O
Three-state outputs: OR-tie capability
OE prev ents data contention in the I/O bus
Process technology : 0.25µm CMOS
Package: 44 pin 400mil TSOP (II)
Stand-by c urrent Icc
(PD)
, Vcc=3.0V
Activ e
current
Ratings (max.)
Icc1
25°C 40°C 70°C 85°C (3.0V, ty p.)
---
---
20µA
---
Power
Supply
Access time
ty pical *
25°C
---
40°C
---
max.
70ns
85ns
100ns
70ns
85ns
100ns
70ns
85ns
100ns
70ns
85ns
100ns
70ns
85ns
100ns
70ns
85ns
100ns
Standard
0 ~ +70°C
M5M5V416BTP , RT -10L
M5M5V416BTP , RT -70H
M5M5V416BTP , RT -85H
M5M5V416BTP , RT -10H
M5M5V416BTP , RT -70LW
M5M5V416BTP , RT -85LW
2.7 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
0.3µA 1µA
1µA
3µA
10µA
---
---
---
---
---
20µA 40µA
40mA
(10MHz)
5mA
(1MHz)
W-
v ersion
M5M5V416BTP , RT -10LW
RT -70HW
M5M5V416BTP , RT -85HW
M5M5V416BTP , RT -10HW
M5M5V416BTP , RT -70LI
M5M5V416BTP , RT -85LI
-20 ~ +85°C
M5M5V416BTP ,
2.7 ~ 3.6V
0.3µA 1µA
---
---
1µA
---
3µA
---
10µA 20µA
20µA 40µA
I-
v ersion
2.7 ~ 3.6V
M5M5V416BTP , RT -10LI
RT -70HI
M5M5V416BTP , RT -85HI
M5M5V416BTP , RT -10HI
-40 ~ +85°C
M5M5V416BTP ,
2.7 ~ 3.6V
0.3µA 1µA
1µA
3µA
10µA 20µA
PIN CONFIGURATION
A4
A3
A2
A1
A0
S1
DQ1
DQ2
DQ3
DQ4
Vcc
GND
DQ5
DQ6
DQ7
DQ8
WE
A15
A14
A13
A12
A16
* "ty pical" parameter is sampled, not 100% tested.
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
BC2
BC1
DQ16
DQ15
DQ14
DQ13
GND
Vcc
DQ12
DQ11
DQ10
DQ9
S2
A8
A9
A10
A11
A17
A5
A6
A7
OE
BC2
BC1
DQ16
DQ15
DQ14
DQ13
GND
Vcc
DQ12
DQ11
DQ10
DQ9
S2
A8
A9
A10
A11
A17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A4
A3
A2
A1
A0
S1
DQ1
DQ2
DQ3
DQ4
Vcc
GND
DQ5
DQ6
DQ7
DQ8
WE
A15
A14
A13
A12
A16
Pin
A0 ~ A17
S1
S2
W
OE
BC1
BC2
Vcc
GND
Function
Address input
Chip select input 1
Chip select input 2
Write control input
Output enable input
Lower By te (DQ1 ~ 8)
Upper By te (DQ9 ~ 16)
Power supply
Ground supply
DQ1 ~ DQ16 Data input / output
44P3W-H
44P3W-J
Outline:
44P3W-H/J
NC: No Connection
MITSUBISHI ELECTRIC
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