MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63800FP
7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M63800FP is a seven-circuit output-sourcing Darlington
transistor array. The circuits are made of PNP and NPN tran-
sistors. This semiconductor integrated circuit performs high-
current driving with extremely low input-current supply.
PIN CONFIGURATION
INPUT
16
→O1
15
→O2
14
→O3
13
→O4
�½
OUTPUT
12
→O5
11
→O6
10
→O7
9
GND
IN1→ 1
IN2→ 2
IN3→ 3
IN4→ 4
IN5→ 5
IN6→ 6
IN7→ 7
V
S
8
FEATURES
High breakdown voltage (BV
CEO
≥
50V)
High-current driving (Io(max) = –500mA)
With output clamping diodes
Driving available with CMOS IC output of 6-16V or with TTL output
Wide operating temperature range (Ta = –20 to +75°C)
Output current-sourcing type
Package type 16P2N-A
CIRCUIT DIAGRAM
APPLICATION
Drives of relays, printers, LEDs, fluorescent display tubes
and lamps, and interfaces between MOS-bipolar logic sys-
tems and relays, solenoids, or small motors
V
S
20K
INPUT
3K
7.2K
1.5K
3K
OUTPUT
FUNCTION
The M63800FP has seven circuits, which are made of input
inverters and current-sourcing outputs. The outputs are
made of PNP transistors and NPN Darlington transistors.
The PNP transistor base current is constant. A spike-killer
clamping diode is provided between each output pin and
GND. V
S
(pin 8) and GND (pin 9) are used commonly among
the eight circuits.
The input has resistance of 3kΩ, and a maximum of 10V can
be applied. The output current is 500mA maximum. Supply
voltage V
S
is 50V maximum.
The M63800FP is enclosed in a molded small flat package,
enabling space-saving design.
GND
The seven circuits share the V
S
and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
S
V
I
I
O
I
F
V
R
P
d
T
opr
T
stg
#
#
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
Parameter
Collector-emitter voltage
Supply voltage
Input voltage
Output current
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Output, L
Conditions
Ratings
–0.5 ~ +50
50
–0.5 ~ +10
–500
–500
50
Unit
V
V
V
mA
mA
V
W
°C
°C
Current per circuit output, H
Ta = 25°C, when mounted on board
1.00
–20 ~ +75
–55 ~ +125
# : Unused I/O pins must be connected to GND.
Aug. 1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
