MITSUBISHI LSIs
M6MGB/T166S4BWG
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
4,194,304-BIT (262,144-WORD BY 16-BIT) CMOS SRAM
Stacked-CSP (Chip Scale Package)
DESCRIPTION
The MITSUBISHI M6MGB/T166S4BWG is a Stacked Chip
Scale Package (S-CSP) that contents 16M-bits flash
memory and 4M-bits Static RAM in a 72-pin S-CSP.
16M-bits Flash memory is a 1,048,576 words, 3.3V-only,
and high performance non-volatile memory fabricated by
CMOS technology for the peripheral circuit and
DINOR(DIvided bit-line NOR) architecture for the memory
cell.
4M-bits SRAM is a 262,144words unsynchronous SRAM
fabricated by silicon-gate CMOS technology.
M6MGB/T166S4BWG is suitable for the application of the
mobile-communication-system to reduce both the mount
space and weight .
FEATURES
• Access time
Flash Memory
90ns (Max.)
SRAM
85ns (Max.)
• Supply voltage
Vcc=2.7 ~ 3.6V
• Ambient temperature
W version
Ta=-20 ~ 85°C
• Package : 72-pin S-CSP , 0.8mm ball pitch
APPLICATION
Mobile communication products
PIN CONFIGURATION (TOP VIEW)
INDEX
H
NC
NC
DU
A5
A4
A0
F-A18
S-LB#
F-WP#
GND
F-WE#
F-
RY/BY#
G
F
E
D
C
B
A
NC
1
NC
2
A16
A8
A10
A9
DQ15
DU
3
A11
4
A15
5
A14
6
A13
7
A12
8
F-GND
F-A17
S-UB#
DU
F-A19
F-RP#
F-VCC
S-VCC
F-GND
GND
A0-A16
A7
A6
A3
A2
A1
S-
CE1#
S-OE#
DU
DU
DQ12
S-
CE2
S-VCC
DU
S-A17
DU
DQ11
11.0 mm
F-CE#
DQ9 DU
DQ8
DQ10
DQ13
:Vcc for Flash
:Vcc for SRAM
:GND for Flash
:Flash/SRAM common GND
:Flash/SRAM
common Address
F-A17-F-A19 :Address for Flash
:Address for SRAM
S-A17
DQ0-DQ15
:Flash/SRAM
common Data I/O
F-CE#
S-CE1#
S-CE2
F-OE#
S-OE#
F-WE#
S-WE#
F-WP#
F-RP#
F-RY/BY#
S-LB#
S-UB#
:Flash Chip Enable
:SRAM Chip Enable
:SRAM Chip Enable
:Flash Output Enable
:SRAM Output Enable
:Flash Write Enable
:SRAM Write Enable
:Flash Write Protect
:Flash Reset Power Down
:Flash Ready /Busy
:SRAM Lower Byte
:SRAM Upper Byte
F-GND
DQ6
DQ4
S-WE#
F-OE#
DQ0 DQ2
DQ1 DQ3
DQ14
9
DU
NC
NC
F-VCC
DQ5 DQ7
DU
10
NC
11
NC
12
8.0 mm
NC:Non Connection
DU:Don't Use (Note: Should be open)
1
Apr. 1999 , Rev.1.7
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
