MITSUBISHI SEMICONDUCTOR GaAs FET
MGF491xG Series
DESCRIPTION
The MGF491xG series super-low-noise HEMT(High Electron
Mobility Transistor) is designed for use in L to Ku band amplifiers.
The
hermetically
sealed
metal-ceramic
package
assures
OUTLINE DRAWING
4.0±0.2
1.85±0.2
1
Unit:millimeters
minimumu parasitic losses, and has a configuration suitable for
microstrip circuits.
The MGF491*G series is mounted in the super 12 tape.
0.5±0.15
FEATURES
• Low noise figure
@f=12GHz
MGF4916G:NFmin.=0.80dB(MAX.)
MGF4919G:NFmin.=0.50dB(MAX.)
• High associated gain
Gs=12.0dB(MIN.)
@f=12GHz
2
2
0.5±0.15
3
APPLICATION
L to Ku band low noise amplifiers.
ø1.8±0.2
QUALITY GRADE
• GG
1
GATE
2
SOURCE
RECOMMENDED BIAS CONDITIONS
• V
DS
=2V,I
D
=10mA
• Refer to Bias Procedure
3
DRAIN
GD-16
ABSOLUTE MAXIMUM RATINGS
(T
a
=25˚C)
Symbol
V
GDO
V
GSO
I
D
P
T
T
ch
T
stg
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
Ratings
-4
-4
60
50
125
-65 to +125
Unit
V
V
mA
mW
˚C
˚C
ELECTRICAL CHARACTERISTICS
(T
a
=25˚C)
Symbol
V
(BR)GDO
I
GSS
I
DSS
V
Gs(off)
gm
G
S
NFmin.
Parameter
Gate to drain breakdown voltage
Gate to source leakage current
Saturated drain current
Gate to source cut-off voltage
Transconductance
Associated gain
Minimum noise figure
I
G
=-10µA
V
GS
=-2V,V
DS
=0V
V
GS
=0V,V
DS
=2V
V
DS
=2V,I
D
=500µA
V
DS
=2V,I
D
=10mA
V
DS
=2V,I
D
=10mA
f=12GHz
MGF4916G
MGF4919G
Test conditions
Min
-3
–
15
-0.1
–
12.0
–
–
Limits
Typ
–
–
–
–
75
13.5
–
–
Max
–
50
60
-1.5
–
–
0.80
0.50
Unit
V
µA
mA
V
mS
dB
dB
dB
Nov. ´97
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
