< C band internally matched power GaAs FET >
MGFC36V3436
3.4 – 3.6 GHz BAND / 4W
DESCRIPTION
The MGFC36V3436 is an internally impedance-matched
GaAs power FET especially designed for use in 3.4 – 3.6
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
OUTLINE DRAWING
Unit : millimeters
21.0 +/-0.3
(1)
2MIN
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB=4W (TYP.) @f=3.4 – 3.6GHz
High power gain
GLP=13.5dB (TYP.) @f=3.4 – 3.6GHz
High power added efficiency
P.A.E.=32% (TYP.) @f=3.4 – 3.6GHz
Low distortion [item -51]
IM3=-45dBc (TYP.) @Po=25dBm S.C.L
0.6 +/-0.15
12.9 +/-0.2
(2)
(2)
R-1.6
11.3
2.6 +/-0.2
2MIN
(3)
10.7
17.0 +/-0.2
APPLICATION
4.5 +/-0.4
QUALITY
IG
1.6
item 01 : 3.4 – 3.6 GHz band power amplifier
item 51 : 3.4 – 3.6 GHz band digital radio communication
RECOMMENDED BIAS CONDITIONS
VDS=10V
ID=1.2A
RG=100ohm
GF-8
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
Absolute maximum ratings
Symbol
VGDO
VGSO
ID
IGR
IGF
PT *1
Tch
Tstg
(Ta=25C)
Parameter
Gate to drain breakdown voltage
Gate to source breakdown voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
Ratings
-15
-15
3.75
-10
21
25
175
-65 to +175
Unit
V
V
A
mA
mA
W
C
C
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
*1 : Tc=25C
Electrical characteristics
Symbol
IDSS
gm
VGS(off)
P1dB
GLP
ID
P.A.E.
IM3 *2
Rth(ch-c) *3
(Ta=25C)
Parameter
Saturated drain current
Transconductance
Gate to source cut-off voltage
Output power at 1dB gain compression
Test conditions
Min.
VDS=3V,VGS=0V
VDS=3V,ID=1.1A
VDS=3V,ID=10mA
VDS=10V,ID(RF off)=1.2A
f=3.4 – 3.6GHz
-
-
-
35
11
-
-
-42
delta Vf method
-
0.2
12.0
Limits
Typ.
-
1
-
37
13.5
1.1
32
-45
5
0.1
Unit
Max.
3.75
-
-4.5
-
-
1.8
-
-
6
A
S
V
dBm
dB
A
%
dBc
C/W
Linear Power Gain
Drain current
Power added efficiency
3rd order IM distortion
Thermal resistance
*2 :item -51 ,2 tone test,Po=25dBm Single Carrier Level ,f=3.6GHz,delta f=5MHz
*3 :Channel-case
Publication Date : Apr., 2011
1
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
