MITSUBISHI <INTELLIGENT POWER MODULES>
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RSD060
PM100RSD060
FLAT-BASE TYPE
FLAT-BASE TYPE
INSULATED PACKAGE
INSULATED PACKAGE
PM100RSD060
FEATURE
a) Adopting new 4th generation planar IGBT chip, which per-
formance is improved by 1µm fine rule process.
For example, typical V
CE
(sat)=1.7V
b) Using new Diode which is designed to get soft reverse
recovery characteristics.
c) Keeping the package compatibility.
The layout/position of both terminal pin and mounting hole
is same as S-series 3rd generation IPM.
• 3φ 100A, 600V Current-sense IGBT for 15kHz switching
• 30A, 600V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for over-
current, short-circuit, over-temperature & under-voltage
(P-Fo available from upper leg devices)
• Acoustic noise-less 11kW class inverter application
• UL Recognized
Yellow Card No.E80276(N)
File No.E80271
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
Dimensions in mm
17.02
3.22
3-2
10
110
±1
95
±0.5
3-2
3-2
10
10
6-2
Screwing depth
Min9.0
4-φ5.5
MOUNTING HOLES
Terminal code
PBT
17
20
2
±0.5
1234
567 8
9 11
10 12
13 15 17 19
14 16 18
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
VUPC
UFO
UP
VUP1
VVPC
VFO
VP
VVP1
VWPC
WFO
11.
12.
13.
14.
15.
16.
17.
18.
19.
WP
VWP1
VNC
VN1
Br
UN
VN
WN
Fo
74
±0.5
20
P
17.5
12
φ2.54
W
89
±1
10
V
U
0.5
±0.3
24.5
A
19-
26
66.44
0.5
2-φ2.54
26
4-R6
6-M5NUTS
21.2
3.22
3-2
0.5
11.6
1.6
A : DETAIL
32.6
31.6
LABEL
4
19.4
22
10.6
22
–0.5
+1.0
4.5
B
N
Jul. 2005
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
