MITSUBISHI INTELLIGENT POWER MODULES
PM150DSA120
FLAT-BASE TYPE
INSULATED PACKAGE
FAULT OUTPUT PULSE WIDTH VS.
TEMPERATURE (TYPICAL)
CONTROL SUPPLY VOLTAGE TRIP-RESET
LEVEL TEMPERATURE DEPENDENCY
(TYPICAL)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each IGBT)
TRANSIENT IMPEDANCE, Z
th(j-c)
, (NORMALIZED VALUE)
120
FAULT OUTPUT PULSE WIDTH % (NORMALIZED)
14
UV
r
UV
10
1
100
UV TRIP-RESET LEVEL,
UV, UV
r
, (VOLTS)
13
10
0
80
12
10
-1
60
11
40
V
D
= 15V
10
10
-2
SINGLE PULSE
STANDARD VALUE = R
th(j-c)Q
= 0.13
o
C/W
0
0
40
80
120
160
JUNCTION TEMPERATURE, T
C
, (
o
C)
0
0
40
80
120
160
10
-3
10
-3
10
-2
10
-1
TIME, (s)
10
0
10
1
JUNCTION TEMPERATURE, T
C
, (
o
C)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each FWDi)
TRANSIENT IMPEDANCE, Z
th(j-c)
, (NORMALIZED VALUE)
10
1
10
0
10
-1
10
-2
SINGLE PULSE
STANDARD VALUE = R
th(j-c)F
= 0.25
o
C/W
10
-3
10
-3
10
-2
10
-1
TIME, (s)
10
0
10
1
Sep.2000
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
