MITSUBISHI SEMICONDUCTORS POWER MODULES MOS
USING INTELLIGENT POWER MODULES
6.0 Introduction to Intelligent
Power Modules (IPM)
Mitsubishi Intelligent Power Mod-
ules (IPMs) are advanced hybrid
power devices that combine high
speed, low loss IGBTs with opti-
mized gate drive and protection cir-
cuitry. Highly effective over-current
and short-circuit protection is real-
ized through the use of advanced
current sense IGBT chips that al-
low continuous monitoring of power
device current. System reliability is
further enhanced by the IPM’s inte-
grated over temperature and under
voltage lock out protection. Com-
pact, automatically assembled In-
telligent Power Modules are de-
signed to reduce system size, cost,
and time to market. Mitsubishi
Electric introduced the first full line
of Intelligent Power Modules in No-
vember, 1991. Continuous im-
provements in power chip, packag-
ing, and control circuit technology
have lead to the IPM lineup shown
in Table 6.1.
6.0.1 Third Generation Intelli-
gent Power Modules
Mitsubishi third generation intelli-
gent power module family shown in
Table 6.1 represents the industries
most complete line of IPMs. Since
their original introduction in 1993
the series has been expanded to
include 36 types with ratings rang-
ing from 10A 600V to 800A 1200V.
The power semiconductors used in
these modules are based on the
field proven H-Series IGBT and di-
ode processes. In Table 6.1 the
third generation family has been di-
vided into two groups, the “Low
Profile Series” and “High Power
Series” based on the packaging
technology that is used. The third
generation IPM has been optimized
for minimum switching losses in or-
der to meet industry demands for
acoustically noiseless inverters
with carrier frequencies up to
20kHz. The built in gate drive and
protection has been carefully de-
signed to minimize the components
required for the user supplied inter-
face circuit.
6.0.2 V-Series High Power IPMs
The V-Series IPM was developed
in order to address newly emerging
industry requirements for higher re-
liability, lower cost and reduced
EMI. By utilizing the low inductance
packaging technology developed
for the U-Series IGBT module (de-
scribed in Section 4.1.5) combined
with an advanced super soft free-
wheel diode and optimized gate
drive and protection circuits the V-
Series IPM family achieves im-
proved performance at reduced
cost. The detailed descriptions of
IPM operation and interface re-
quirements presented in Sections
6.1 through 6.8 apply to V-Series
as well as third generation IPMs.
The only exception being that V-
Series IPMs have a unified short
circuit protection function that takes
the place of the separate short cir-
cuit and over current functions de-
scribed in Sections 6.4.4 and 6.4.5.
The unified protection was made
Table 6.1 Mitsubishi Intelligent Power Modules
Type Number
Amps Power Circuit
Type Number
Amps Power Circuit
Third Generation Low Profile Series - 600V
PM10CSJ060
10 Six IGBTs
PM15CSJ060
15 Six IGBTs
PM20CSJ060
20 Six IGBTs
PM30CSJ060
30 Six IGBTs
PM50RSK060
50 Six IGBTs + Brake ckt.
PM75RSK060
75 Six IGBTs + Brake ckt.
Third Generation Low Profile Series - 1200V
PM10CZF120
10 Six IGBTs
PM10RSH120 10 Six IGBTs + Brake ckt.
PM15CZF120
15 Six IGBTs
PM15RSH120 15 Six IGBTs + Brake ckt.
PM25RSK120
25 Six IGBTs + Brake ckt.
Third Generation High Power Series - 600V
PM75RSA060
75 Six IGBTs + Brake ckt.
PM100CSA060 100 Six IGBTs
PM100RSA060 100 Six IGBTs + Brake ckt.
PM150CSA060 150 Six IGBTs
PM150RSA060 150 Six IGBTs + Brake ckt.
PM200CSA060 200 Six IGBTs
PM200RSA060 200 Six IGBTs + Brake ckt.
PM200DSA060 200 Two IGBTs: Half Bridge
PM300DSA060 300 Two IGBTs: Half Bridge
PM400DAS060 400 Two IGBTs: Half Bridge
PM600DSA060 600 Two IGBTs: Half Bridge
PM800HSA060 800 One IGBT
Third Generation High Power Series - 1200V
PM25RSB120
25 Six IGBTs + Brake ckt.
PM50RSA120
50 Six IGBTs + Brake ckt.
PM75CSA120
75 Six IGBTs
PM75DSA120
75 Two IGBTs: Half Bridge
PM100CSA120 100 Six IGBTs
PM100DSA120 100 Two IGBTs: Half Bridge
PM150DSA120 150 Two IGBTs: Half Bridge
PM200DSA120 200 Two IGBTs: Half Bridge
PM300DSA120 300 Two IGBTs: Half Bridge
PM400HSA120 400 Two IGBTs: Half Bridge
PM600HSA120 600 One IGBT
PM800HSA120 800 One IGBT
V-Series High Power - 600V
PM75RVA060
75 Six IGBTs + Brake ckt.
PM100CVA060 100 Six IGBTs
PM150CVA060 150 Six IGBTs
PM200CVA060 200 Six IGBTs
PM300CVA060 300 Six IGBTs
PM400DVA060 400 Two IGBTs: Half Bridge
PM600DVA060 600 Two IGBTs: Half Bridge
V-Series High Power - 1200V
PM50RVA120
50 Six IGBTs + Brake ckt.
PM75CVA120
75 Six IGBTs
PM100CVA120 100 Six IGBTs
PM150CVA120 150 Six IGBTs
PM200DVA120 200 Two IGBTs: Half Bridge
PM300DVA120 300 Two IGBTs: Half Bridge
Sep.1998
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
