MITSUBISHI <INTELLIGENT POWER MODULES>
MITSUBISHI <INTELLIGENT POWER MODULES>
PM50CSE060
PM50CSE060
FLAT-BASE TYPE
FLAT-BASE TYPE
INSULATED PACKAGE
INSULATED PACKAGE
PM50CSE060
FEATURE
a) Adopting new 4th generation planar IGBT chip, which per-
formance is improved by 1µm fine rule process.
For example, typical V
CE
(sat)=1.7V
b) Using new Diode which is designed to get soft reverse
recovery characteristics.
• 3φ 50A, 600V Current-sense IGBT for 15kHz switching
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for over-
current, short-circuit, over-temperature & under-voltage
• Acoustic noise-less 3.7kW class inverter application
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
Dimensions in mm
110
±1
95
±0.5
2-2.54 2-2.54 2-2.54
6-2.54
17.02
10.16 10.16 10.16
3.22
PBT
Screwing depth
Min9.0
4-φ5.5
MOUNTING HOLES
Terminal code
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
V
UPC
U
P
V
UP1
V
VPC
V
P
V
VP1
V
WPC
W
P
V
WP1
V
NC
11.
12.
13.
14.
15.
16.
V
N1
NC
U
N
V
N
W
N
F
O
20
2
±0.5
17
123
4 56
78 9
10 12 14 16
11 13 15
74
±0.5
20
P
17.5
12
N
89
±1
W
V
U
0.5
±0.3
24.5
4-R6
26
67.4
16-
0.64
2-φ2.54
26
6-M5NUTS
21.2
22
–0.5
+1.0
3.22
11.6
2-2.54
1.6
32.6
A : DETAIL
31.6
19.4
LABEL
4
22
10.6
A
4.5
10
B
φ2.54
0.64
Sep. 2001
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
