MITSUBISHI SEMICONDUCTORS POWER MODULES MOS
USING INTELLIGENT POWER MODULES
the effect of the controlled shut-
down (for obtaining the oscillo-
graph in “A”
the internal soft shutdown was in-
tentionally deactivated). The IPM
uses actual device current mea-
surement to detect all types of over
Figure 6.17
INPUT
SIGNAL
current conditions. Even resistive
and inductive shorts to ground that
are often missed by conventional
desaturation and bus current sens-
ing protection schemes will be de-
tected by the IPMs current sense
IGBTs.
Note:
V-Series IPMs do not have an
over- current protection function.
Instead a unified short circuit pro-
tection function that has a delay
like the over current protection de-
scribed in this section is used.
Operation of Over-Current and Short-Circuit Protection
INTERNAL
GATE
VOLTAGE
(V
GE
)
t
off
(OC)
SHORT CIRCUIT
TRIP LEVEL
OVER CIRCUIT
TRIP LEVEL
thold
thold
COLLECTOR
CURRENT
I
FO
FAULT OUTPUT
CURRENT
t
FO
t
FO
NORMAL OPERATION
FWD RECOVERY CURRENT
IGNORED BY OC PROTECTION
OVER CURRENT
FAULT AND
RECOVERY
SHORT CIRCUIT
FAULT AND
RECOVERY
NORMAL OPERATION
Figure 6.18
OC Operation of PM200DSA060 (I
C
: 100A/div; 100V/div; t: 1µs/div)
OC PROTECTION WITHOUT SOFT SHUTDOWN
OC PROTECTION WITH SOFT SHUTDOWN
V
CE (surge)
V
CE (surge)
I
C
V
CE
I
C
V
CE
Sep.1998
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
