MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS11036
PS11036
FLAT-BASE TYPE
FLAT-BASE TYPE
INSULATED TYPE
INSULATED TYPE
PS11036
INTEGRATED FUNCTIONS AND FEATURES
• Converter bridge for 3 phase AC-to-DC power conversion.
• 3 phase IGBT inverter bridge configured by the latest 3rd.
generation IGBT and diode technology.
• Inverter output current capability I
O
(Note 1):
Type Name Motor Rating I
O
(100%) I
O
(150%; 60sec)
16.5Arms
PS11036 2.2 kW/200V AC 11.0Arms
(Note 1) : The inverter output current is assumed to be sinu-
soidal and the peak current value of each of the
above loading cases is defined as : I
OP
= I
O
× √
2,
T
C
< 100°C
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS:
• P-Side IGBTs : Drive circuit, high-level-shift circuit, bootstrap circuit supply scheme for Single Control-Power-Source drive, and un-
der voltage (UV) protection.
• N-Side IGBTs : Drive circuit, DC-Link current sense and amplifier circuits for overcurrent protection, control-supply under-voltage
protection (UV), and fault output (F
O
) signaling circuit.
• Fault Output : N-side IGBT short circuit (SC), over-current (OC), and control supply under-voltage (UV).
• Inverter Analog Current Sense : N-Side IGBT DC-Link Current Sense.
• Input Interface : 5V CMOS/TTL compatible, Schmitt Trigger input, and Arm-Shoot-Through interlock protective function.
APPLICATION
Acoustic noise-less 2.2kW/200V AC Class 3 phase inverters, motor control applications, and
motors with built-in small size inverter package
PACKAGE OUTLINES
95
±1
85
±0.3
14.5
2
56
24
(14.5)
18
4-φ4.6
Terminals Assignment :
1. CBU+
2. CBU–
3. CBV +
4. CBV –
5. CBW+
6. CBW–
7. VD
8. UP
9. VP
10. WP
11. UN
12. VN
13. WN
14. FO
15. Vamp
16. GND
21. P1
22. R
23. S
24. T
25. N1
26. P2
27. U
28. V
29. W
30. N2
15
9
0.4
0.5
2.5
71
(31.6)
62.35
±0.8
59
±0.3
74
±1
30.75
±0.5
0.5
15
21
22
23
24
25
26
27
28
29
30
9
6.35
±0.3
57.15
±0.8
2
3
23.5
(4-φ5)
(35)
(82.1)
4
23.5
3
12
34
56
7
16
3
±0.5
M I T S U B I S H I
E L E C T R I C
J A P A N
Type name
Lot.No
(Fig. 1)
8
±0.5
16.5
±0.5
3.5
Jan. 2000
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
