MITSUBISHI TRANSISTOR MODULES
QM150DY-2HK
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
200
T
j
=25°C
160
10
4
7
5
3
2
10
3
7
5
3
2
10
2
7
5
3
2
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT I
C
(A)
I
B
=1.5A
I
B
=0.8A
I
B
=0.4A
I
B
=200mA
120
DC CURRENT GAIN h
FE
V
CE
=5.0V
V
CE
=2.8V
80
I
B
=100mA
40
0
0
1
2
3
4
5
10
1
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
2 3 4 5 7 10
3
T
j
=25°C
T
j
=125°C
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT I
C
(A)
SATURATION VOLTAGE V
CE (sat)
, V
BE (sat)
(V)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
10
1
7
5
4
3
2
10
0
7
5
4
3
2
10
–1
1.8
2.2
2.6
3.0
3.4
3.8
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
10
1
7
5
4
3
2
10
0
7
5
4
3
2
10
–1
10
1
BASE CURRENT I
B
(A)
V
BE(sat)
V
CE
=2.8V
T
j
=25°C
V
CE(sat)
I
B
=3A
T
j
=25°C
T
j
=125°C
2 3 4 5 7 10
2
2 3 4 5 7 10
3
BASE-EMITTER VOLTAGE
V
BE
(V)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE
V
CE
(sat)
(V)
5
T
j
=25°C
T
j
=125°C
4
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
10
2
7 V
CC
=600V
5 I
B1
=–I
B2
=3A
T
j
=25°C
3
T
j
=125°C
2
10
1
7
5
3
2
10
0
7
5
3
2
t
on
t
s
3
I
C
=200A
2
I
C
=150A
1
I
C
=100A
SWITCHING TIME
t
on
, t
s
, t
f
(µs)
t
f
0
10
–1
2 3 4 5 7 10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
10
–1
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
2 3 4 5 7 10
3
BASE CURRENT I
B
(A)
COLLECTOR CURRENT
I
C
(A)
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
