MITSUBISHI TRANSISTOR MODULES
QM200HA-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
10
2
7
5
4
3
2
10
1
7
5
4
3
2
10
0
10
–1
REVERSE BIAS SAFE OPERATING AREA
400
COLLECTOR CURRENT I
C
(A)
t
s
, t
f
(µs)
V
CC
=600V
I
B1
=4A
I
C
=200A
I
B2
=
–4A
300
I
B2
=–10A
SWITCHING TIME
t
s
200
T
j
=125°C
100
t
f
T
j
=25°C
T
j
=125°C
2 3 4 5 7 10
0
2 3 4 5 7 10
1
0
0
200
400
600
800
1000
BASE REVERSE CURRENT –I
B2
(A)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
FORWARD BIAS SAFE OPERATING AREA
10
3
7
5
3
2
10
2
7
5
3
2
100
90
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR CURRENT I
C
(A)
100µ
S
1m
50µ
S
DC
S
DERATING FACTOR (%)
80
70
60
50
40
30
20
10
0
0
20
40
60
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
10
1
7
5
3
2 T
C
=25°C
NON–REPETITIVE
10
0
10
0
2 3 4 5 710
1
2 3 4 5 7 10
2
2 3 4 5 7 10
3
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR REVERSE CURRENT –I
C
(A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
0
2 3 45 710
1
2 3
10
0.10
0.08
µ
200
S
80 100 120 140 160
CASE TEMPERATURE
T
C
(°C)
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
Z
th (j–c)
(°C/ W)
0.06
0.04
0.02
0
10
–3
2 3 4 5 7 10
–2
2 3 4 5 710
–1
2 3 4 5 7 10
0
10
0
0
T
j
=25°C
T
j
=125°C
0.4
0.8
1.2
1.6
2.0
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
