MITSUBISHI TRANSISTOR MODULES
QM20KD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEX (SUS)
V
CEX
V
CBO
V
EBO
I
C
–I
C
P
C
I
B
–I
CSM
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
(Inverter part, T
j
=25°C)
Conditions
I
C
=1A, V
EB
=2V
V
EB
=2V
Emitter open
Collector open
DC
DC (forward diode current)
T
C
=25°C
DC
Peak value of one cycle of 60Hz (half wave)
Ratings
600
600
600
7
20
20
83
1
200
Unit
V
V
V
V
A
A
W
A
A
ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
V
RSM
E
a
I
O
I
FSM
I
2t
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Recommended AC input voltage
DC output current
Surge (non-repetitive) forward current
I
2t
for fusing
(Converter part, T
j
=25°C)
Conditions
Ratings
800
900
220
Three phase full wave rectifying circuit, T
c
=79°C
One half cycle at 60 Hz, peak value
Value for one cycle of surge current
30
300
375
Unit
V
V
V
A
A
A
2
s
ABSOLUTE MAXIMUM RATINGS
Symbol
T
j
T
stg
V
iso
—
—
Parameter
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
(Common)
Conditions
Ratings
–40~150
–40~125
Charged part to case, AC for 1 minute
Mounting screw M5
Typical value
2500
1.47~1.96
15~20
125
Unit
°C
°C
V
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS
Symbol
I
CEX
I
CBO
I
EBO
V
CE (sat)
V
BE (sat)
–V
CEO
h
FE
t
on
t
s
t
f
R
th (j-c) Q
R
th (j-c) R
R
th (c-f)
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Switching time
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
(Inverter part, T
j
=25°C)
Test conditions
V
CE
=600V, V
EB
=2V
V
CB
=600V, Emitter open
V
EB
=7V
I
C
=20A, I
B
=80mA
–I
C
=20A (diode forward voltage)
I
C
=20A, V
CE
=2V
Limits
Min.
—
—
—
—
—
—
250
—
V
CC
=300V, I
C
=20A, I
B1
=120mA,–I
B2
=0.4A
—
—
Transistor part (per 1/6 module)
Diode part (per 1/6 module)
Conductive grease applied
—
—
—
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
40
2.0
2.5
1.5
—
1.5
12
2.0
1.5
2.5
0.35
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/
W
°C/
W
°C/
W
ELECTRICAL CHARACTERISTICS
Symbol
I
RRM
V
FM
R
th (j-c)
R
th (c-f)
Parameter
Repetitive peak reverse current
Forward voltage
Thermal resistance
Contact thermal resistance
(Converter part, T
j
=25°C)
Test conditions
V
R
=V
RRM
, T
j
=150°C
I
F
=30A
Junction to case
Case to fin, conductive grease applied
Limits
Min.
—
—
—
—
Typ.
—
—
—
—
Max.
5.0
1.3
0.9
0.35
Unit
mA
V
°C/
W
°C/
W
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
