MITSUBISHI TRANSISTOR MODULES
QM30TB-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
100
T
j
=25°C
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
10
0
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT I
C
(A)
80
DC CURRENT GAIN h
FE
V
CE
=5.0V
60
V
CE
=2.8V
I
B
=2A
I
B
=1A
I
B
=0.5A
I
B
=0.3A
40
20
I
B
=0.1A
T
j
=25°C
T
j
=125°C
2 3 4 5 7 10
1
2 3 4 5 7 10
2
0
0
1.0
2.0
3.0
4.0
5.0
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT I
C
(A)
SATURATION VOLTAGE V
CE (sat)
, V
BE (sat)
(V)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
10
1
7
5
4
3
2
10
0
7
5
4
3
2
10
–1
1.6
2.0
2.4
2.8
3.2
3.6
V
CE
=2.8V
T
j
=25°C
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
10
1
7
5
4
3
2
10
0
7
5
4
3
2
BASE CURRENT I
B
(A)
V
BE(sat)
V
CE(sat)
I
B
=0.6A
T
j
=25°C
T
j
=125°C
2 3 4 5 7 10
1
2 3 4 5 7 10
2
10
–1
10
0
BASE-EMITTER VOLTAGE
V
BE
(V)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE
V
CE
(sat)
(V)
5
2
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
t
on
, t
s
, t
f
(µs)
4
I
C
=15A
I
C
=30A
3
I
C
=5A
SWITCHING TIME
10
1
7
5
4
3
2
t
s
V
CC
=600V
I
B1
=–I
B2
=0.6A
t
f
t
on
2
1
0
10
–2
T
j
=25°C
T
j
=125°C
2 3 4 5 7 10
–1
2 3 4 5 7 10
0
10
0
7
5
4
3
2
10
0
T
j
=25°C
T
j
=125°C
2 3 4 5 7 10
1
2 3 4 5 7 10
2
BASE CURRENT I
B
(A)
COLLECTOR CURRENT
I
C
(A)
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
