MITSUBISHI TRANSISTOR MODULES
QM50DY-24
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
100
10
4
7
5
3
2
10
3
7
5
3
2
10
2
7
5
3
2
V
CE
=2.8V
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT I
C
(A)
T
j
=25°C
80
I
B
=1.5A
60
I
B
=1.0A
40
DC CURRENT GAIN h
FE
T
j
=25°C
T
j
=125°C
V
CE
=5.0V
I
B
=0.5A
I
B
=0.3A
I
B
=0.1A
20
0
0
1
2
3
4
5
10
1
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
2 3 4 5 7 10
3
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT I
C
(A)
SATURATION VOLTAGE V
CE (sat)
, V
BE (sat)
(V)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
10
1
7
5
4
3
2
10
0
7
5
4
3
2
10
–1
1.6
2.0
2.4
2.8
3.2
3.6
V
CE
=2.8V
T
j
=25°C
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
10
1
7
5
4
3
2
10
0
7
5
4
3
2
10
–1
10
0
BASE CURRENT I
B
(A)
V
BE(sat)
V
CE(sat)
I
B
=1A
T
j
=25°C
T
j
=125°C
2 3 4 5 7 10
1
2 3 4 5 7 10
2
BASE-EMITTER VOLTAGE
V
BE
(V)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE
V
CE
(sat)
(V)
5
4
I
C
=20A
I
C
=50A
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
10
2
7
5
3
2
10
1
7
5
3
2
V
CC
=600V
I
B1
=–I
B2
=1A
T
j
=25°C
T
j
=125°C
t
f
t
on
, t
s
, t
f
(µs)
t
s
3
I
C
=30A
2
SWITCHING TIME
1
0
10
–2
2 3 4 5 710
–1
2 3 4 5 7 10
0
2 3 4 5 7 10
1
T
j
=25°C
T
j
=125°C
10
0
t
on
7
5
3
2
–1
10
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
2 3 4 5 7 10
3
BASE CURRENT I
B
(A)
COLLECTOR CURRENT
I
C
(A)
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
