MITSUBISHI DIODE MODULES
RM100DZ/CZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
0.4
ALLOWABLE SURGE (NON-REPETITIVE)
FORWARD CURRENT
2000
T
j
=25°C
SURGE (NON-REPETITIVE)
FORWARD CURRENT (A)
FORWARD CURRENT (A)
1600
1200
800
400
0.8
1.2
1.6
2.0
2.4
0
1
2 3
5 7 10
20 30
50 70100
FORWARD VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM POWER DISSIPATION
160
140
TRANSIENT THERMAL IMPEDANCE
(°C/W)
MAXIMUM TRANSIENT THERMAL IMPEDANCE
(JUNCTION TO CASE)
10
0
2 3 5 710
1
0.40
0.35
RESISTIVE, INDUCTIVE LOAD
SINGLE-PHASE
OPERATION
THREE-PHASE
OPERATION
DC
OPERATION
POWER DISSIPATION (W)
0.30
0.25
0.20
0.15
0.10
0.05
0
10
–3
2 3 5 710
–2
2 3 5 7 10
–1
2 3 5 7 10
0
120
100
80
60
40
20
0
0
20
40
60
80 100 120 140 160
TIME (s)
AVERAGE FORWARD CURRENT (A)
ALLOWABLE CASE TEMPERATURE
VS. AVERAGE FORWARD CURRENT
160
RESISTIVE, INDUCTIVE LOAD
CASE TEMPERATURE (°C)
140
DC OPERATION
120
100
SINGLE
PHASE
OPERATION
THREE-PHASE
OPERATION
0
20
40
60
80 100 120 140 160
80
60
AVERAGE FORWARD CURRENT (A)
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
