MITSUBISHI FAST RECOVERY DIODE MODULES
RM300HA-24F
HIGH SPEED SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
V
DRM
V
R (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
(T
j
=25°C)
Voltage class
24
1200
1350
960
Unit
V
V
V
Symbol
I
DC
I
FSM
I
2t
T
j
T
stg
V
iso
DC current
Parameter
Resistive load, T
C
=75°C
Conditions
Ratings
300
3000
3.75
×
10
4
Unit
A
A
A
2
s
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Surge (non-repetitive) forward current
I
2t
for fusing
One half cycle at 60Hz, peak value
Value for one cycle surge current
Junction temperature
Storage temperature
Isolation voltage
Charged part to case
Main terminal screw M6
—
Mounting torque
Mounting screw M5
—
Weight
Typical value
–40~+150
–40~+125
2500
1.96~2.94
20~30
1.47~1.96
15~20
200
ELECTRICAL CHARACTERISTICS
Limits
Symbol
I
RRM
V
FM
t
rr
Q
rr
R
th (j-c)
R
th (c-f)
Parameter
Repetitive reverse current
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
T
j
=150°C, V
RRM
applied
T
j
=25°C, I
FM
=300A, Instantaneous meas.
I
FM
=300A, T
j
=150°C, di/dt=– 600A/µs, V
R
=600V
Junction to case
Case to fin, conductive grease applied
Test conditions
Min.
—
—
—
—
—
—
Typ.
—
—
—
—
—
—
Max.
40
1.5
0.8
80
0.2
0.15
Unit
mA
V
µs
µC
°C/
W
°C/
W
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
