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SYS321000ZK-025 参数 Datasheet PDF下载

SYS321000ZK-025图片预览
型号: SYS321000ZK-025
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×32 SRAM模块 [1M x 32 SRAM MODULE]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 7 页 / 137 K
品牌: MOSAIC [ MOSAIC ]
 浏览型号SYS321000ZK-025的Datasheet PDF文件第1页浏览型号SYS321000ZK-025的Datasheet PDF文件第3页浏览型号SYS321000ZK-025的Datasheet PDF文件第4页浏览型号SYS321000ZK-025的Datasheet PDF文件第5页浏览型号SYS321000ZK-025的Datasheet PDF文件第6页浏览型号SYS321000ZK-025的Datasheet PDF文件第7页  
ISSUE 1.5 : December 1998
SYS321000ZK/LK - 012/015/20/25
DC OPERATING CONDITIONS
Absolute Maximum Ratings
(1)
Parameter
Voltage on any pin relative to V
SS
Power Dissipation
Storage Temperature
Symbol
V
T(2)
P
T
T
STG
Min
-0.3
-
-55
Typ
-
-
-
Max
7.0
8.0
125
Unit
V
W
o
C
Notes : (1) Stresses above those listed may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at those or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
(2) V
T
can be -2.0V pulse of less than 10ns.
Recommended Operating Conditions
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temperature
Symbol
V
CC
V
IH
V
IL
T
A
T
AI
Min
4.5
2.2
-0.3
0
-40
Typ
5.0
-
-
-
-
Max
5.5
V
CC
+0.3
0.8
70
85
Unit
V
V
V
o
C
o
C
(Commercial)
(Industrial)
DC Electrical Characteristics
(V
CC
=5V±10%)
T
A
0 to 70
o
C
Parameter
I/P Leakage Current
Symbol Test Condition
Address,OE,WE
Worst Case
Min Typ
-16
-16
-
-
-
-
2.4
-
-
-
-
-
-
-
max
16
16
1360
480
80
0.4
-
Unit
µA
µA
mA
mA
mA
V
V
I
LI
I
LO
I
CC1
I
SB1
I
SB2
V
OL
V
OH
0V < V
IN
< V
CC
CS = V
IH,
V
I/O
= GND to V
CC
Min. Cycle, CS = V
IL
,V
IL
<V
IN
<V
IH
CS = V
IH
CS
>
V
CC
-0.2V, 0.2<V
IN
<V
CC
-0.2V
I
OL
= 8.0mA
I
OH
= -4.0mA
Output Leakage Current
Average Supply Current
Standby Supply Current
Output Voltage
TTL
CMOS
Typical values are at V
CC
=5.0V,T
A
=25
o
C and specified loading. CS above refers to CS1~4.
Capacitance
(V
CC
=5V±10%,T
A
=25
o
C)
Note: Capacitance calculated, not measured.
Parameter
Input Capacitance
(Address,OE,WE)
I/P Capacitance
(other)
I/O Capacitance
Symbol Test Condition
C
IN1
C
IN2
C
I/O
V
IN
= 0V
V
IN
= 0V
V
I/O
= 0V
max
64
10
80
Unit
pF
pF
pF
2