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V29LC51002 参数 Datasheet PDF下载

V29LC51002图片预览
型号: V29LC51002
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位262,144 ×8位的5伏CMOS FLASH MEMORY [2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY]
分类和应用:
文件页数/大小: 12 页 / 55 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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MOSEL VITELIC
V29LC51002
2 MEGABIT (262,144 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
Description
PRELIMINARY
Features
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s
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256Kx8-bit Organization
Address Access Time: 90 ns
Single 5V
±
10% Power Supply
Sector Erase Mode Operation
512 bytes per Sector, 512 Sectors
– Sector-Erase Cycle Time: 10ms (Max)
– Byte-Write Cycle Time: 30
µ
s (Max)
Minimum 1,000 Erase-Program Cycles
Low power dissipation
– Active Read Current: 20mA (Typ)
– Active Program Current: 30mA (Typ)
– Standby Current: 100µA (Max)
Low V
CC
Program Inhibit Below 3.5V
CMOS and TTL Interface
Packages:
– 32-pin Plastic DIP
– 32-pin PLCC
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The V29LC51002 is a high speed 262,144 x 8 bit
CMOS flash memory. Writing or erasing the device
is done with a single 5 Volt power supply. The
device has separate chip enable CE, write enable
WE, and output enable OE controls to eliminate
bus contention.
The V29LC51002 features a sector erase
operation which allows each sector to be erased
and reprogrammed without affecting data stored in
other sectors. The device also supports full chip
erase.
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Device Usage Chart
Operating
Temperature
Range
0
°
C to 70
°
C
Package Outline
P
J
Access Time (ns)
90
Temperature
Mark
Blank
V29LC51002 Rev. 0.5 October 2000
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