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V43658R04VXTG-75 参数 Datasheet PDF下载

V43658R04VXTG-75图片预览
型号: V43658R04VXTG-75
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3伏8M ×64 UNBUFFERED SDRAM模块 [3.3 VOLT 8M x 64 UNBUFFERED SDRAM MODULE]
分类和应用: 动态存储器
文件页数/大小: 12 页 / 195 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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V43658R04V
3.3 VOLT 8M x 64 UNBUFFERED SDRAM
MODULE
PRELIMINARY
CILETIV LESO M
Features
168 Pin Unbuffered 8,388,608 x 64 bit
Oganization SDRAM DIMM
Utilizes High Performance 128 Mbit, 8M x 16
SDRAM in TSOPII-54 Packages
Fully PC Board Layout Compatible to INTEL’S
Rev 1.0 Module Specification
Single +3.3V (± 0.3V) Power Supply
Programmable CAS Latency, Burst Length, and
Wrap Sequence (Sequential & Interleave)
Auto Refresh (CBR) and Self Refresh
All Inputs, Outputs are LVTTL Compatible
4096 Refresh Cycles every 64 ms
Serial Present Detect (SPD)
SDRAM Performance
Description
The V43658R04V memory module is organized
8,388,608 x 64 bits in a 168 pin dual in line memory
module (DIMM). The 8M x 64 memory module uses
4 Mosel-Vitelic 8M x 16 SDRAM. The x64 modules
are ideal for use in high performance computer
systems where increased memory density and fast
access times are required.
Part Number
V43658R04VXTG-75
Speed
Grade
-75, CL=3
(133 MHz)
-75PC, CL=2,3
(133 MHz)
-10PC, CL=2,3
(100 MHz)
Configuration
8M x 64
V43658R04VXTG-75PC
8M x 64
V43658R04VXTG-10PC
8M x 64
V43658R04V Rev. 1.0 March 2002
1