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V437216S04VCTG-75 参数 Datasheet PDF下载

V437216S04VCTG-75图片预览
型号: V437216S04VCTG-75
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3伏16M X 72高性能PC133非缓冲ECC SDRAM模块 [3.3 VOLT 16M x 72 HIGH PERFORMANCE PC133 UNBUFFERED ECC SDRAM MODULE]
分类和应用: 动态存储器PC
文件页数/大小: 12 页 / 252 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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MOSEL VITELIC
V437216S04V(C)TG-75
3.3 VOLT 16M x 72 HIGH PERFORMANCE
PC133 UNBUFFERED ECC SDRAM
MODULE
Description
PRELIMINARY
Features
s
168 Pin Unbuffered 16,777,216 x 72 bit
Oganization SDRAM ECC DIMMs
s
Utilizes High Performance 8M x 8 SDRAM in
TSOPII-54 Packages
s
Fully PC Board Layout Compatible to INTEL’S
Rev 1.0 Module Specification
s
Single +3.3V (
±
0.3V) Power Supply
s
Programmable CAS Latency, Burst Length, and
Wrap Sequence (Sequential & Interleave)
s
Auto Refresh (CBR) and Self Refresh
s
All Inputs, Outputs are LVTTL Compatible
s
4096 Refresh Cycles every 64 ms
s
Serial Present Detect (SPD)
s
SDRAM Performance
Component Used
t
CK
t
AC
Clock Frequency (max.)
Clock Access Time CAS
Latency = 3
The V437216S04V(C)TG-75 memory module is
organized 16,777,216 x 64 bits in a 168 pin dual in
line memory module (DIMM). The 16M x 72
memory module uses 18 Mosel-Vitelic 8M x 8
SDRAM. The x72 modules are ideal for use in high
performance computer systems where increased
memory density and fast access times are required.
-7
143
5.4
Units
MHz
ns
s
Supported Latencies at 133 MHz Operation
CL
3
t
RCD
3
t
RP
3
t
RC
8
CLK
V437216S04V(C)TG-75-01
V437216S04V(C)TG-75 Rev. 1.2 September 2000
1