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V53C16258SHT40 参数 Datasheet PDF下载

V53C16258SHT40图片预览
型号: V53C16258SHT40
PDF下载: 下载PDF文件 查看货源
内容描述: 高性能256K ×16 EDO页模式的CMOS动态RAM可选自刷新 [HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH]
分类和应用: 内存集成电路光电二极管动态存储器
文件页数/大小: 20 页 / 560 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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MOSEL VITELIC
AC Characteristics
(Cont’d)
25
(100 MHz)
#
54
55
56
Symbol
t
OEP
t
T
t
REF
Parameter
OE High Pulse Width
Transition Time (Rise and Fall)
Refresh Interval (512 Cycles)
30
35
40
45
V53C16258H
50
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit Notes
4
1.5
50
8
5
1.5
50
8
8
1.5
50
8
10
1.5
50
8
10
1.5
50
8
10
1.5
50
8
ns
ns
ms
15
17
Optional Self Refresh
57
t
RASS
t
RPS
t
CHS
t
CHD
RAS Pulse Width During Self
Refresh
RAS Precharge Time During
Self Refresh
CAS Hold Time Width During
Self Refresh
CAS Low Time During Self
Refresh
100
100
100
100
100
100
µs
ns
18
58
100
100
100
100
100
100
18
59
100
100
100
100
100
100
ns
µs
18
60
100
100
100
100
100
100
18
Notes:
1. I
CC
is dependent on output loading when the device output is selected. Specified I
CC
(max.) is measured with the
output open.
2. I
CC
is dependent upon the number of address transitions. Specified I
CC
(max.) is measured with a maximum of two
transitions per address cycle in EDO Page Mode.
3. Specified V
IL
(min.) is steady state operating. During transitions, V
IL
(min.) may undershoot to –1.0 V for a period
not to exceed 20 ns. All AC parameters are measured with V
IL
(min.)
V
SS
and V
IH
(max.)
V
CC
.
4. t
RCD
(max.) is specified for reference only. Operation within t
RCD
(max.) limits insures that t
RAC
(max.) and t
CAA
(max.) can be met. If t
RCD
is greater than the specified t
RCD
(max.), the access time is controlled by t
CAA
and t
CAC
.
5. Either t
RRH
or t
RCH
must be satisified for a Read Cycle to occur.
6. Measured with a load equivalent to one TTL input and 50 pF.
7. Access time is determined by the longest of t
CAA
, t
CAC
and t
CAP
.
8. Assumes that t
RAD
t
RAD
(max.). If t
RAD
is greater than t
RAD
(max.), t
RAC
will increase by the amount that t
RAD
exceeds t
RAD
(max.).
9. Assumes that t
RCD
t
RCD
(max.). If t
RCD
is greater than t
RCD
(max.), t
RAC
will increase by the amount that t
RCD
exceeds t
RCD
(max.).
10. Assumes that t
RAD
t
RAD
(max.).
11. Operation within the t
RAD
(max.) limit ensures that t
RAC
(max.) can be met. t
RAD
(max.) is specified as a reference
point only. If t
RAD
is greater than the specified t
RAD
(max.) limit, the access time is controlled by t
CAA
and t
CAC
.
12. t
WCS
, t
RWD
, t
AWD
and t
CWD
are not restrictive operating parameters.
13. t
WCS
(min.) must be satisfied in an Early Write Cycle.
14. t
DS
and t
DH
are referenced to the latter occurrence of CAS or WE.
15. t
T
is measured between V
IH
(min.) and V
IL
(max.). AC-measurements assume t
T
= 3 ns.
16. Assumes a three-state test load (5 pF and a 500 Ohm Thevenin equivalent).
17. An initial 200
µs
pause and 8 RAS-containing cycles are required when exiting an extended period of bias without
clocks. An extended period of time without clocks is defined as one that exceeds the specified Refresh Interval.
18. One CBR refresh or complete set of row refreah cycles must be completed upon exiting Self Refreah Mode.
V53C16258H Rev. 3.8 November 1999
7