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V53C16258SH 参数 Datasheet PDF下载

V53C16258SH图片预览
型号: V53C16258SH
PDF下载: 下载PDF文件 查看货源
内容描述: 高性能256K ×16 EDO页模式的CMOS动态RAM自刷新 [HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM SELF REFRESH]
分类和应用:
文件页数/大小: 20 页 / 156 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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MOSEL VITELIC
V53C16258SH
HIGH PERFORMANCE
256K X 16 EDO PAGE MODE
CMOS DYNAMIC RAM
SELF REFRESH
PRELIMINARY
HIGH PERFORMANCE
Max. RAS Access Time, (t
RAC
)
Max. Column Address Access Time, (t
CAA
)
Min. Extended Data Out Mode Cycle Time, (t
PC
)
Min. Read/Write Cycle Time, (t
RC
)
50
50 ns
24 ns
19 ns
90 ns
Features
s
256K x 16-bit organization
s
EDO Page Mode for a sustained data rate of
53 MHz (-50ns)
s
RAS access time: 50 ns
s
Dual CAS Inputs
s
Low power dissipation
s
Read-Modify-Write, RAS-Only Refresh,
CAS-Before-RAS Refresh
s
Self Refresh
s
Refresh Interval: 512 cycles/8 ms
s
Available in 40-pin 400 mil SOJ and 40/44L-pin
400 mil TSOP-II packages
s
Single +5V
±
10% Power Supply
s
TTL Interface
Description
The V53C16258SH is a high speed 262,144 x 16
bit high performance CMOS dynamic random
access memory. The V53C16258SH offers a
combination of unique features including: EDO
Page Mode operation for higher sustained
bandwidth with Page Mode cycle times as short as
19ns. All inputs are TTL compatible. Input and
output capacitance is significantly lowered to
increase performance and minimize loading. These
features make the V53C16258SH ideally suited for
a wide variety of high performance computer
systems and peripheral applications.
Device Usage Chart
Operating
Temperature
Range
0
°
C to 70
°
C
Package Outline
K
T
Access Time (ns)
50
Power
Std.
Temperature
Mark
Blank
V53C16258SH Rev 0.3 September 1998
1