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V53C317405AT60 参数 Datasheet PDF下载

V53C317405AT60图片预览
型号: V53C317405AT60
PDF下载: 下载PDF文件 查看货源
内容描述: [DRAM|EDO|4MX4|CMOS|TSOP|26PIN|PLASTIC ]
分类和应用: 内存集成电路光电二极管动态存储器
文件页数/大小: 24 页 / 177 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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MOSEL VITELIC
V53C317405A
4M X 4 EDO PAGE MODE
CMOS DYNAMIC RAM
V53C317405A
Max. RAS Access Time, (t
RAC
)
Max. Column Address Access Time, (t
CAA
)
Min. Extended Data Out Page Mode Cycle Time, (t
PC
)
Min. Read/Write Cycle Time, (t
RC
)
50
50 ns
25 ns
20 ns
84 ns
60
60 ns
30 ns
25 ns
104 ns
Features
s
4M x 4-bit organization
s
EDO Page Mode for a sustained data rate
of 50 MHz
s
RAS access time: 50, 60, 70 ns
s
Low power dissipation
s
Read-Modify-Write, RAS-Only Refresh,
CAS-Before-RAS Refresh, Hidden Refresh
s
Refresh Interval: 2048 cycles/32 ms
s
Available in 24/26-pin 300 mil SOJ,
and 24/26-pin 300 mil TSOP-II
s
Single +3.3 V
±
10% Power Supply
s
TTL Interface
Description
The V53C317405A is a 4,194,304 x 4 bit high-
performance CMOS dynamic random access
memory. The V53C317405A offers Page mode
operation with Extended Data Output. The
V53C317405A has a symmetric address, 11-bit row
and 11-bit column.
All inputs are TTL compatible. EDO Page Mode
operation allows random access up to 2048 x 4 bits,
within a page, with cycle times as short as 20ns.
These features make the V53C317405A ideally
suited for a wide variety of high performance
computer systems and peripheral applications.
Device Usage Chart
Operating
Temperature
Range
0
°C
to 70
°C
Package Outline
K
Access Time (ns)
50
Power
Std.
T
60
Temperature
Mark
Blank
V53C317405A Rev. 0.2 September 1998
1