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V53C808H45 参数 Datasheet PDF下载

V53C808H45图片预览
型号: V53C808H45
PDF下载: 下载PDF文件 查看货源
内容描述: 高性能1M ×8位EDO页模式的CMOS动态RAM可选自刷新 [HIGH PERFORMANCE 1M x 8 BIT EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH]
分类和应用:
文件页数/大小: 18 页 / 138 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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MOSEL VITELIC
AC Characteristics
(Cont’d)
35
#
32
33
34
35
36
37
V53C808H
40
45
50
Notes
14
14
14
14
Symbol
t
DS
t
DH
t
WOH
t
OED
t
RWC
t
RRW
t
CWD
t
RWD
t
CRW
t
AWD
t
PC
t
CP
t
CAR
t
CAP
t
DHR
t
CSR
t
RPC
t
CHR
t
PCM
t
T
t
REF
t
COH
Parameter
Data in Setup Time
Data in Hold Time
Write to OE Hold Time
OE to Data Delay Time
Read-Modify-Write Cycle Time
Read-Modify-Write Cycle RAS
Pulse Width
CAS to WE Delay
RAS to WE Delay in
CAS Pulse Width (RMW)
Col. Address to WE Delay
EDO Page Mode Read or Write
Cycle Time
CAS Precharge Time
Column Address to RAS Setup Time
Access Time from Column Precharge
Data in Hold Time Referenced to RAS
CAS Setup Time
CAS-before-RAS Refresh
RAS to CAS Precharge Time
CAS Hold Time
CAS-before-RAS Refresh
EDO Page Mode Read-Modify-Write
Cycle Time
Transition Time (Rise and Fall)
Refresh Interval (1024 Cycles)
Output Hold After CAS Low
Min. Max. Min. Max. Min. Max. Min. Max. Unit
0
4
5
5
105
70
0
5
6
6
110
75
0
6
7
7
115
80
0
7
8
8
130
87
ns
ns
ns
ns
ns
ns
38
39
40
41
42
28
54
46
35
14
30
58
48
38
15
32
62
50
41
17
34
68
52
42
19
ns
ns
ns
ns
ns
12
12
12
43
44
45
46
47
4
18
21
28
10
5
20
23
30
10
6
22
25
35
10
7
24
27
40
10
ns
ns
ns
ns
ns
7
48
49
0
8
0
8
0
10
0
12
ns
ns
50
58
60
65
70
ns
51
52
53
3
50
16
5
3
50
16
5
3
50
16
5
3
50
16
5
ns
ms
ns
15
Optional Self Refresh
54
55
t
RASS
t
RPS
t
CHS
t
CHD
RAS Pulse Width During Self Refresh
RAS Precharge Time During Self
Refresh
CAS Hold Time Width During Self
Refresh
CAS Low Time During Self
Refresh
100
100
100
100
100
100
100
100
ms
ns
18
18
56
100
100
100
100
ns
ms
18
57
100
100
100
100
18
V53C808H Rev. 1.5 April 1998
6