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V54C3128404VS 参数 Datasheet PDF下载

V54C3128404VS图片预览
型号: V54C3128404VS
PDF下载: 下载PDF文件 查看货源
内容描述: 的128Mbit SDRAM 3.3伏, TSOP II / SOC封装8M ×16 , 16M ×8 , 32M ×4 [128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4]
分类和应用: 动态存储器
文件页数/大小: 49 页 / 681 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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V54C3128(16/80/40)4V(T/S)
128Mbit SDRAM
3.3 VOLT, TSOP II / SOC PACKAGE
8M X 16, 16M X 8, 32M X 4
PRELIMINARY
CILETIV LESO M
6
System Frequency (f
CK
)
Clock Cycle Time (t
CK3
)
Clock Access Time (t
AC3
) CAS Latency = 3
Clock Access Time (t
AC2
) CAS Latency = 2
166 MHz
6 ns
5.4 ns
5.4 ns
7PC
143 MHz
7 ns
5.4 ns
5.4 ns
7
143 MHz
7 ns
5.4 ns
6 ns
8PC
125 MHz
8 ns
6 ns
6 ns
Features
4 banks x 2Mbit x 16 organization
4 banks x 4Mbit x 8 organization
4 banks x 8Mbit x 4 organization
High speed data transfer rates up to 166 MHz
Full Synchronous Dynamic RAM, with all signals
referenced to clock rising edge
Single Pulsed RAS Interface
Data Mask for Read/Write Control
Four Banks controlled by BA0 & BA1
Programmable CAS Latency: 2, 3
Programmable Wrap Sequence: Sequential or
Interleave
Programmable Burst Length:
1, 2, 4, 8 for Sequential Type
1, 2, 4, 8 for Interleave Type
Multiple Burst Read with Single Write Operation
Automatic and Controlled Precharge Command
Random Column Address every CLK (1-N Rule)
Power Down Mode
Auto Refresh and Self Refresh
Refresh Interval: 4096 cycles/64 ms
Available in 60-ball SOC BGA and 54 Pin
TSOPII
LVTTL Interface
Single +3.3 V
±0.3
V Power Supply
Description
The V54C3128(16/80/40)4V(T/S) is a four bank
Synchronous DRAM organized as 4 banks x 2Mbit
x 16, 4 banks x 4Mbit x 8, or 4 banks x 8Mbit x 4.
The V54C3128(16/80/40)4V(T/S) achieves high
speed data transfer rates up to 166 MHz by employ-
ing a chip architecture that prefetches multiple bits
and then synchronizes the output data to a system
clock
All of the control, address, data input and output
circuits are synchronized with the positive edge of
an externally supplied clock.
Operating the four memory banks in an inter-
leaved fashion allows random access operation to
occur at higher rate than is possible with standard
DRAMs. A sequential and gapless data rate of up to
166 MHz is possible depending on burst length,
CAS latency and speed grade of the device.
Device Usage Chart
Operating
Temperature
Range
0°C to 70°C
Package Outline
T/S
Access Time (ns)
6
Power
8PC
7PC
7
Std.
L
Temperature
Mark
Blank
V54C3128(16/80/40)4V(T/S) Rev. 1.2 August 2002
1